中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructures

文献类型:期刊论文

作者Gao, Teng1; Song, Xiuju1; Du, Huiwen2; Nie, Yufeng1; Chen, Yubin1; Ji, Qingqing1; Sun, Jingyu1; Yang, Yanlian2; Zhang, Yanfeng1,3; Liu, Zhongfan1
刊名NATURE COMMUNICATIONS
出版日期2015-04-01
卷号6
ISSN号2041-1723
DOI10.1038/ncomms7835
英文摘要In-plane and vertically stacked heterostructures of graphene and hexagonal boron nitride (h-BN-G and G/h-BN, respectively) are both recent focuses of graphene research. However, targeted synthesis of either heterostructure remains a challenge. Here, via chemical vapour deposition and using benzoic acid precursor, we have achieved the selective growth of h-BN-G and G/h-BN through a temperature-triggered switching reaction. The perfect in-plane h-BN-G is characterized by scanning tunnelling microscopy (STM), showing atomically patched graphene and h-BN with typical zigzag edges. In contrast, the vertical alignment of G/h-BN is confirmed by unique lattice-mismatch-induced moire 'patterns in high-resolution STM images, and two sets of aligned selected area electron diffraction spots, both suggesting a van der Waals epitaxial mechanism. The present work demonstrates the chemical designability of growth process for controlled synthesis of graphene and h-BN heterostructures. With practical scalability, high uniformity and quality, our approach will promote the development of graphene-based electronics and optoelectronics.
语种英语
WOS记录号WOS:000353703400002
出版者NATURE PUBLISHING GROUP
源URL[http://ir.iccas.ac.cn/handle/121111/43577]  
专题中国科学院化学研究所
通讯作者Zhang, Yanfeng
作者单位1.Peking Univ, Coll Chem & Mol Engn, Beijing Sci & Engn Ctr Low Dimens Carbon Mat, Ctr Nanochem CNC,Beijing Natl Lab Mol Sci, Beijing 100871, Peoples R China
2.Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China
3.Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China
推荐引用方式
GB/T 7714
Gao, Teng,Song, Xiuju,Du, Huiwen,et al. Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructures[J]. NATURE COMMUNICATIONS,2015,6.
APA Gao, Teng.,Song, Xiuju.,Du, Huiwen.,Nie, Yufeng.,Chen, Yubin.,...&Liu, Zhongfan.(2015).Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructures.NATURE COMMUNICATIONS,6.
MLA Gao, Teng,et al."Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructures".NATURE COMMUNICATIONS 6(2015).

入库方式: OAI收割

来源:化学研究所

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