Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructures
文献类型：期刊论文
| 作者 | Gao, Teng1; Song, Xiuju1; Du, Huiwen2; Nie, Yufeng1; Chen, Yubin1; Ji, Qingqing1; Sun, Jingyu1; Yang, Yanlian2; Zhang, Yanfeng1,3; Liu, Zhongfan1 |
| 刊名 | NATURE COMMUNICATIONS
 |
| 出版日期 | 2015-04-01 |
| 卷号 | 6 |
| ISSN号 | 2041-1723 |
| DOI | 10.1038/ncomms7835 |
| 英文摘要 | In-plane and vertically stacked heterostructures of graphene and hexagonal boron nitride (h-BN-G and G/h-BN, respectively) are both recent focuses of graphene research. However, targeted synthesis of either heterostructure remains a challenge. Here, via chemical vapour deposition and using benzoic acid precursor, we have achieved the selective growth of h-BN-G and G/h-BN through a temperature-triggered switching reaction. The perfect in-plane h-BN-G is characterized by scanning tunnelling microscopy (STM), showing atomically patched graphene and h-BN with typical zigzag edges. In contrast, the vertical alignment of G/h-BN is confirmed by unique lattice-mismatch-induced moire 'patterns in high-resolution STM images, and two sets of aligned selected area electron diffraction spots, both suggesting a van der Waals epitaxial mechanism. The present work demonstrates the chemical designability of growth process for controlled synthesis of graphene and h-BN heterostructures. With practical scalability, high uniformity and quality, our approach will promote the development of graphene-based electronics and optoelectronics. |
| 语种 | 英语 |
| WOS记录号 | WOS:000353703400002 |
| 出版者 | NATURE PUBLISHING GROUP |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/43577]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Zhang, Yanfeng |
| 作者单位 | 1.Peking Univ, Coll Chem & Mol Engn, Beijing Sci & Engn Ctr Low Dimens Carbon Mat, Ctr Nanochem CNC,Beijing Natl Lab Mol Sci, Beijing 100871, Peoples R China 2.Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China 3.Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, Teng,Song, Xiuju,Du, Huiwen,et al. Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructures[J]. NATURE COMMUNICATIONS,2015,6. |
| APA | Gao, Teng.,Song, Xiuju.,Du, Huiwen.,Nie, Yufeng.,Chen, Yubin.,...&Liu, Zhongfan.(2015).Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructures.NATURE COMMUNICATIONS,6. |
| MLA | Gao, Teng,et al."Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructures".NATURE COMMUNICATIONS 6(2015). |
入库方式： OAI收割
来源：化学研究所
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