COVERAGE-DEPENDENT GROWTH STRUCTURES OF SODIUM ON THE GAAS(110) SURFACE
文献类型:期刊论文
作者 | BAI, CL; HASHIZUME, T; JEON, DR; SAKURAI, T |
刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
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出版日期 | 1993-03-01 |
卷号 | 32期号:3B页码:1401-1404 |
关键词 | Alkali Metal Sodium Gaas Fi-stm Thin Film |
ISSN号 | 0021-4922 |
英文摘要 | The geometry and the coverage-dependent growth structures formed by Na deposition on the GaAs(110) surface were studied by a field-ion scanning tunneling microscope (FI-STM) in an ultrahigh-vacuum. In the low-coverage regime at 300 K, Na adatoms reside on a bridge site encompassing one Ga and two As surface atoms to form linear chains along the substrate [110BAR] direction. The Na-Na nearest-neighbor distance in this low-density chain structure is 0.8 nm. With slightly larger Na coverages, the chains became disordered. Some of them were packed closer to form domains showing a local 2 x 2 structure. None of high-density 2D ordered structures or low-density zigzag chains were observed, in contrast to the Cs/GaAs(110) system. Additional Na adsorption resulted in the formation of three-dimensional disordered clusters. The saturation coverage of Na adsorption on the GaAs(110) surface was determined to be about 0.1 ML (1 ML=2 Na per substrate unit cell). The I-V curve recorded-over the clean surface was consistent with published data for n-GaAs(110), while no evidence of metallic characteristics was found in the I-V curves recorded over the various Na-covered surfaces. |
语种 | 英语 |
WOS记录号 | WOS:A1993KW40100011 |
出版者 | JAPAN J APPLIED PHYSICS |
源URL | [http://ir.iccas.ac.cn/handle/121111/44505] ![]() |
专题 | 中国科学院化学研究所 |
通讯作者 | BAI, CL |
作者单位 | 1.CHINESE ACAD SCI,INST CHEM,BEIJING 100080,PEOPLES R CHINA 2.MYONG JI UNIV,DEPT PHYS,SEOUL 449728,SOUTH KOREA |
推荐引用方式 GB/T 7714 | BAI, CL,HASHIZUME, T,JEON, DR,et al. COVERAGE-DEPENDENT GROWTH STRUCTURES OF SODIUM ON THE GAAS(110) SURFACE[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,1993,32(3B):1401-1404. |
APA | BAI, CL,HASHIZUME, T,JEON, DR,&SAKURAI, T.(1993).COVERAGE-DEPENDENT GROWTH STRUCTURES OF SODIUM ON THE GAAS(110) SURFACE.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,32(3B),1401-1404. |
MLA | BAI, CL,et al."COVERAGE-DEPENDENT GROWTH STRUCTURES OF SODIUM ON THE GAAS(110) SURFACE".JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 32.3B(1993):1401-1404. |
入库方式: OAI收割
来源:化学研究所
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