pi-Extended Isoindigo-Based Derivative: A Promising Electron Deficient Building Block for Polymer Semiconductors
文献类型：期刊论文
| 作者 | Xu, Long1,2; Zhao, Zhiyuan3; Xiao, Mingchao1,2; Yang, Jie1,2; Xiao, Jian1,2; Yi, Zhengran1,2; Wang, Shuai1,2; Liu, Yunqi3 |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2017-11-22 |
| 卷号 | 9期号:46页码:40549-40555 |
| 关键词 | Organic Thin-film Transistors Electron-deficient Building Blocks Donor-acceptor Copolymers Isoindigo Molecular Packing |
| ISSN号 | 1944-8244 |
| DOI | 10.1021/acsami.7b13570 |
| 英文摘要 | The exploration of novel electron-deficient building blocks is a key task for developing high-performance polymer semiconductors in organic thin-film transistors. In view of the situation of the lack of strong electron-deficient building blocks, we designed two novel pi-extended isoindigo-based electron-deficient building blocks, IVI and F4IVI. Owing to the strong electron-deficient nature and the extended pi-conjugated system of the two acceptor units, their copolymers, PIVI2T and PF(4)IVI2T, containing 2,2'-bithiophene donor units, are endowed with deep-lying highest occupied molecular orbital (HOMO)/lowest unoccupied molecular orbital (LUMO) energy levels and strong intermolecular interactions. In comparison to PIVI2T, the fluorinated PF(4)IVI2T exhibits stronger intra- and intermolecular interactions, lower HOMO/LUMO energy levels up to -5.74/-4.17 eV, and more ordered molecular packing with a smaller pi-pi stacking distance of up to 3.53 angstrom, resulting in an excellent ambipolar transporting behavior and a promising application in logic circuits for PF(4)IVI2T in ambient with hole and electron mobilities of up to 1.03 and 1.82 cm2 V-1 s(-1), respectively. The results reveal that F4IVI is a promising and strong electron-deficient building unit to construct high-performance semiconducting polymers, which provides an insight into the structureproperty relationships for the exploration and molecular engineering of excellent electron-deficient building blocks in the field of organic electronics. |
| 语种 | 英语 |
| WOS记录号 | WOS:000416614600076 |
| 出版者 | AMER CHEMICAL SOC |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/45043]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Yi, Zhengran; Wang, Shuai; Liu, Yunqi |
| 作者单位 | 1.Huazhong Univ Sci & Technol, Coll Chem & Chem Engn, Wuhan 430074, Hubei, Peoples R China 2.Huazhong Univ Sci & Technol, Key Lab Large Format Battery Mat & Syst, Minist Educ, Hubei Key Lab Mat Chem & Serv Failure, Wuhan 430074, Hubei, Peoples R China 3.Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, Long,Zhao, Zhiyuan,Xiao, Mingchao,et al. pi-Extended Isoindigo-Based Derivative: A Promising Electron Deficient Building Block for Polymer Semiconductors[J]. ACS APPLIED MATERIALS & INTERFACES,2017,9(46):40549-40555. |
| APA | Xu, Long.,Zhao, Zhiyuan.,Xiao, Mingchao.,Yang, Jie.,Xiao, Jian.,...&Liu, Yunqi.(2017).pi-Extended Isoindigo-Based Derivative: A Promising Electron Deficient Building Block for Polymer Semiconductors.ACS APPLIED MATERIALS & INTERFACES,9(46),40549-40555. |
| MLA | Xu, Long,et al."pi-Extended Isoindigo-Based Derivative: A Promising Electron Deficient Building Block for Polymer Semiconductors".ACS APPLIED MATERIALS & INTERFACES 9.46(2017):40549-40555. |
入库方式： OAI收割
来源：化学研究所
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