Solution-processable precursor route for fabricating ultrathin silica film for high performance and low voltage organic transistors
文献类型：期刊论文
| 作者 | Guo, Shujing1,2; Wang, Zhongwu2; Xu, Zeyang2; Wang, Shuguang2; Wu, Kunjie2; Chen, Shufeng1; Zhang, Zongbo3; Xu, Caihong3; Qiu, Wenfeng2; Li, Liqiang2 |
| 刊名 | CHINESE CHEMICAL LETTERS
 |
| 出版日期 | 2017-11-01 |
| 卷号 | 28期号:11页码:2143-2146 |
| 关键词 | Silica Spin Coating Thin Film Transistor |
| ISSN号 | 1001-8417 |
| DOI | 10.1016/j.cclet.2017.08.041 |
| 英文摘要 | Silica is one of the most commonly used materials for dielectric layer in organic thin-film transistors due to its excellent stability, excellent electrical properties, mature preparation process, and good compatibility with organic semiconductors. However, most of conventional preparation methods for silica film are generally performed at high temperature and/or high vacuum. In this paper, we introduce a simple solution spin-coating method to fabricate silica thin film from precursor route, which possesses a low leakage current, high capacitance, and low surface roughness. The silica thin film can be produced in the condition of low temperature and atmospheric environment. To meet various demands, the thickness of film can be adjusted by means of preparation conditions such as the speed of spin-coating and the concentration of solution. The p-type and n-type organic field effect transistors fabricated by using this film as gate electrodes exhibit excellent electrical performance including low voltage and high performance. This method shows great potential for industrialization owing to its characteristic of low consumption and energy saving, time-saving and easy to operate. (C) 2017 Chinese Chemical Society and Institute of Materia Medica, Chinese Academy of Medical Sciences. Published by Elsevier B.V. All rights reserved. |
| 语种 | 英语 |
| WOS记录号 | WOS:000417962800019 |
| 出版者 | ELSEVIER SCIENCE INC |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/45153]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Chen, Shufeng; Zhang, Zongbo; Qiu, Wenfeng; Li, Liqiang |
| 作者单位 | 1.Inner Mongolia Univ, Coll Chem & Chem Engn, Hohhot 010021, Peoples R China 2.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Adv Nanomat Div, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China 3.Chinese Acad Sci, Inst Chem, Lab High Tech Mat, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo, Shujing,Wang, Zhongwu,Xu, Zeyang,et al. Solution-processable precursor route for fabricating ultrathin silica film for high performance and low voltage organic transistors[J]. CHINESE CHEMICAL LETTERS,2017,28(11):2143-2146. |
| APA | Guo, Shujing.,Wang, Zhongwu.,Xu, Zeyang.,Wang, Shuguang.,Wu, Kunjie.,...&Li, Liqiang.(2017).Solution-processable precursor route for fabricating ultrathin silica film for high performance and low voltage organic transistors.CHINESE CHEMICAL LETTERS,28(11),2143-2146. |
| MLA | Guo, Shujing,et al."Solution-processable precursor route for fabricating ultrathin silica film for high performance and low voltage organic transistors".CHINESE CHEMICAL LETTERS 28.11(2017):2143-2146. |
入库方式： OAI收割
来源：化学研究所
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