Low-Temperature and Rapid Growth of Large Single-Crystalline Graphene with Ethane
文献类型：期刊论文
| 作者 | Sun, Xiao1,2; Lin, Li1; Sun, Luzhao1; Zhang, Jincan1,2; Rui, Dingran3; Li, Jiayu2; Wang, Mingzhan1; Tan, Congwei1,2; Kang, Ning3; Wei, Di4 |
| 刊名 | SMALL
 |
| 出版日期 | 2018-01-18 |
| 卷号 | 14期号:3 |
| 关键词 | Ethane Large Single-crystalline Graphene Low Decomposition Energy Low-temperature Growth Rapid Growth |
| ISSN号 | 1613-6810 |
| DOI | 10.1002/smll.201702916 |
| 英文摘要 | Future applications of graphene rely highly on the production of large-area high-quality graphene, especially large single-crystalline graphene, due to the reduction of defects caused by grain boundaries. However, current large single-crystalline graphene growing methodologies are suffering from low growth rate and as a result, industrial graphene production is always confronted by high energy consumption, which is primarily caused by high growth temperature and long growth time. Herein, a new growth condition achieved via ethane being the carbon feedstock to achieve low-temperature yet rapid growth of large single-crystalline graphene is reported. Ethane condition gives a growth rate about four times faster than methane, achieving about 420 mu m min(-1) for the growth of sub-centimeter graphene single crystals at temperature about 1000 degrees C. In addition, the temperature threshold to obtain graphene using ethane can be reduced to 750 degrees C, lower than the general growth temperature threshold (about 1000 degrees C) with methane on copper foil. Meanwhile ethane always keeps higher graphene growth rate than methane under the same growth temperature. This study demonstrates that ethane is indeed a potential carbon source for efficient growth of large single-crystalline graphene, thus paves the way for graphene in high-end electronical and optoelectronical applications. |
| 语种 | 英语 |
| WOS记录号 | WOS:000422789800011 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/45449]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Peng, Hailin; Liu, Zhongfan |
| 作者单位 | 1.Peking Univ, Coll Chem & Mol Engn, Beijing Natl Lab Mol Sci, Ctr Nanochem,Beijing Sci & Engn Ctr Nanocarbons, Beijing 100871, Peoples R China 2.Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China 3.Peking Univ, Dept Elect, Key Lab Phys & Chem Nanodevices, Beijing Key Lab Quantum Devices, Beijing 100871, Peoples R China 4.Beijing Graphene Inst, Beijing 100094, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun, Xiao,Lin, Li,Sun, Luzhao,et al. Low-Temperature and Rapid Growth of Large Single-Crystalline Graphene with Ethane[J]. SMALL,2018,14(3). |
| APA | Sun, Xiao.,Lin, Li.,Sun, Luzhao.,Zhang, Jincan.,Rui, Dingran.,...&Liu, Zhongfan.(2018).Low-Temperature and Rapid Growth of Large Single-Crystalline Graphene with Ethane.SMALL,14(3). |
| MLA | Sun, Xiao,et al."Low-Temperature and Rapid Growth of Large Single-Crystalline Graphene with Ethane".SMALL 14.3(2018). |
入库方式： OAI收割
来源：化学研究所
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