Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures
文献类型：期刊论文
| 作者 | Li, Jiayu1,2,3; Lin, Li4; Huang, Guang-Yao1,2; Kang, N.1,2; Zhang, Jincan4; Peng, Hailin4; Liu, Zhongfan4; Xu, H. Q.1,2,5 |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2018-02-14 |
| 卷号 | 123期号:6 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.5009742 |
| 英文摘要 | Graphene/hexagonal boron nitride (G/h-BN) heterostructures offer an excellent platform for developing nanoelectronic devices and for exploring correlated states in graphene under modulation by a periodic superlattice potential. Here, we report on transport measurements of nearly 0 degrees-twisted G/h-BN heterostructures. The heterostructures investigated are prepared by dry transfer and thermally annealing processes and are in the low mobility regime (approximately 3000 cm(2) V-1 s(-1) at 1.9 K). The replica Dirac spectra and Hofstadter butterfly spectra are observed on the hole transport side, but not on the electron transport side, of the heterostructures. We associate the observed electron-hole asymmetry with the presence of a large difference between the opened gaps in the conduction and valence bands and a strong enhancement in the interband contribution to the conductivity on the electron transport side in the low-mobility G/h-BN heterostructures. We also show that the gaps opened at the central Dirac point and the hole-branch secondary Dirac point are large, suggesting the presence of strong graphene-substrate interaction and electron-electron interaction in our G/h-BN heterostructures. Our results provide additional helpful insight into the transport mechanism in G/h-BN heterostructures. Published by AIP Publishing. |
| 语种 | 英语 |
| WOS记录号 | WOS:000425192500015 |
| 出版者 | AMER INST PHYSICS |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/45621]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Kang, N.; Xu, H. Q. |
| 作者单位 | 1.Peking Univ, Beijing Key Lab Quantum Devices, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China 2.Peking Univ, Dept Elect, Beijing 100871, Peoples R China 3.Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China 4.Peking Univ, Ctr Nanochem, Beijing Sci & Engn Ctr Nanocarbons, Beijing Natl Lab Mol Sci,Coll Chem & Mol Engn, Beijing 100871, Peoples R China 5.Lund Univ, Div Solid State Phys, POB 118, S-22100 Lund, Sweden |
| 推荐引用方式 GB/T 7714 | Li, Jiayu,Lin, Li,Huang, Guang-Yao,et al. Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures[J]. JOURNAL OF APPLIED PHYSICS,2018,123(6). |
| APA | Li, Jiayu.,Lin, Li.,Huang, Guang-Yao.,Kang, N..,Zhang, Jincan.,...&Xu, H. Q..(2018).Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures.JOURNAL OF APPLIED PHYSICS,123(6). |
| MLA | Li, Jiayu,et al."Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures".JOURNAL OF APPLIED PHYSICS 123.6(2018). |
入库方式： OAI收割
来源：化学研究所
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