Air-Stable In-Plane Anisotropic GeSe2 for Highly Polarization-Sensitive Photodetection in Short Wave Region
文献类型：期刊论文
| 作者 | Yang, Yusi1,2,3; Liu, Shun-Chang1,6; Yang, Wei2,3; Li, Zongbao4; Wang, Yang5; Wang, Xia4; Zhang, Shishu2,3; Zhang, Yun1; Long, Mingsheng5; Zhang, Gengmin2,3 |
| 刊名 | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
 |
| 出版日期 | 2018-03-21 |
| 卷号 | 140期号:11页码:4150-4156 |
| ISSN号 | 0002-7863 |
| DOI | 10.1021/jacs.8b01234 |
| 英文摘要 | In-plane anisotropic layered materials such as black phosphorus (BP) have emerged as an important class of two-dimensional (2D) materials that bring a new dimension to the properties of 2D materials, hence providing a wide range of opportunities for developing conceptually new device applications. However, all of recently reported anisotropic 280 2D materials are relatively narrow-bandgap semiconductors (< 2 eV), and there has been no report about this type of materials with wide bandgap, restricting the relevant applications such as polarization-sensitive photodetection in short wave region. Here we present a new member of the family, germanium diselenide (GeSe2) with a wide bandgap of 2.74 eV, and systematically investigate the in-plane anisotropic structural, vibrational, electrical, and optical properties from theory to experiment. Photodetectors based on GeSe2 exhibit a highly polarization-sensitive photoresponse in short wave region due to the optical absorption anisotropy induced by in-plane anisotropy in crystal structure. Furthermore, exfoliated GeSe2 flakes show an outstanding stability in ambient air which originates from the high activation energy of oxygen chemisorption on GeSe2 (2.12 eV) through our theoretical calculations, about three times higher than that of BP (0.71 eV). Such unique in-plane anisotropy and wide bandgap, together with high air stability, make GeSe2 a promising candidate for future 2D optoelectronic applications in short wave region. |
| 语种 | 英语 |
| WOS记录号 | WOS:000428356000046 |
| 出版者 | AMER CHEMICAL SOC |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/46119]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Xue, Ding-Jiang; Hu, Jin-Song |
| 作者单位 | 1.Chinese Acad Sci, CAS Res Educ Ctr Excellence Mol Sci, CAS Key Lab Mol Nanostruct & Nanotechnol, Beijing Natl Res Ctr Mol Sci,Inst Che, Beijing 100190, Peoples R China 2.Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China 3.Peking Univ, Dept Elect, Beijing 100871, Peoples R China 4.Tongren Univ, Sch Mat & Chem Engn, Tongren 554300, Peoples R China 5.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China 6.Univ Chinese Acad Sci, Sch Chem Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, Yusi,Liu, Shun-Chang,Yang, Wei,et al. Air-Stable In-Plane Anisotropic GeSe2 for Highly Polarization-Sensitive Photodetection in Short Wave Region[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2018,140(11):4150-4156. |
| APA | Yang, Yusi.,Liu, Shun-Chang.,Yang, Wei.,Li, Zongbao.,Wang, Yang.,...&Wan, Li-Jun.(2018).Air-Stable In-Plane Anisotropic GeSe2 for Highly Polarization-Sensitive Photodetection in Short Wave Region.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,140(11),4150-4156. |
| MLA | Yang, Yusi,et al."Air-Stable In-Plane Anisotropic GeSe2 for Highly Polarization-Sensitive Photodetection in Short Wave Region".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 140.11(2018):4150-4156. |
入库方式： OAI收割
来源：化学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。