Performance of hybrid p-type vertical transistors with poly(N-vinylcarbazole) as emitter and the transfer mechanism of charge carriers through the base
文献类型：期刊论文
| 作者 | Huang, Jinying1; Ma, Dongge1; Huemmelgen, Ivo A.2 |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2013-11-01 |
| 卷号 | 28期号:11 |
| ISSN号 | 0268-1242 |
| DOI | 10.1088/0268-1242/28/11/115001 |
| 英文摘要 | We report hybrid vertical architecture p-type transistors with poly(N-vinylcarbazole) as the emitter, p-type silicon as the collector and Al:Ca alloy layer as the base. The investigation of the common-base and common-emitter characteristics clearly demonstrates that the devices operate as permeable-base transistors (PBTs). The PBTs show common-base current gain alpha of 0.98 at -V-BC = 1.5 V and common-emitter gain beta of over 100. Atomic force microscope images of the base layer show an uneven surface, showing that the annealing does not dissolve the charge trap states but offers 'pinholes' for the oxidation in-depth even through the whole base layer. In this case, the charge carriers must tunnel the thin oxidized layer, and then are collected. It is clearly seen that there exists a barrier against holes injection from the base to the collector semiconductor at the interface, and the further oxidation caused by exposing the devices in air changes the operational mode of the resulting devices from the PBT to the metal-base transistor. |
| 语种 | 英语 |
| WOS记录号 | WOS:000326378700001 |
| 出版者 | IOP PUBLISHING LTD |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/46719]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Ma, Dongge |
| 作者单位 | 1.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China 2.Univ Fed Parana, Dept Fis, Grp Organ Optoelect Devices, BR-81531990 Curitiba, Parana, Brazil |
| 推荐引用方式 GB/T 7714 | Huang, Jinying,Ma, Dongge,Huemmelgen, Ivo A.. Performance of hybrid p-type vertical transistors with poly(N-vinylcarbazole) as emitter and the transfer mechanism of charge carriers through the base[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2013,28(11). |
| APA | Huang, Jinying,Ma, Dongge,&Huemmelgen, Ivo A..(2013).Performance of hybrid p-type vertical transistors with poly(N-vinylcarbazole) as emitter and the transfer mechanism of charge carriers through the base.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,28(11). |
| MLA | Huang, Jinying,et al."Performance of hybrid p-type vertical transistors with poly(N-vinylcarbazole) as emitter and the transfer mechanism of charge carriers through the base".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 28.11(2013). |
入库方式： OAI收割
来源：化学研究所
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