High Power Efficiency Yellow Phosphorescent OLEDs by Using New Iridium Complexes with Halogen-Substituted 2-Phenylbenzo[d]thiazole Ligands
文献类型：期刊论文
| 作者 | Fan, Cong1; Zhu, Liping2; Jiang, Bei1; Li, Yifan1; Zhao, Fangchao2; Ma, Dongge2; Qin, Jingui1; Yang, Chuluo1 |
| 刊名 | JOURNAL OF PHYSICAL CHEMISTRY C
 |
| 出版日期 | 2013-09-19 |
| 卷号 | 117期号:37页码:19134-19141 |
| ISSN号 | 1932-7447 |
| DOI | 10.1021/jp406220c |
| 英文摘要 | On the basis of the yellow iridium phosphor, bis(2-phenylbenzothiozolato-N,C-2 ')iridium(acetylacetonate) [(bt)(2)Ir(acac)], the three halogen-substituted analogues were designed and synthesized by introducing the F, Cl, and Br atoms to the 4-position of phenyl ring in the ligand of 2-phenylbenzo[d]thiazole. The optoelectronic properties of all the four iridium complexes were fully investigated. Compared to the 559 nm peak emission of (bt)(2)Ir(acac) in CH2Cl2 solution, adding F atom caused the peak emission of (4-F-bt)(2)Ir(acac) blue shift to 540 nm, while adding Cl and Br atoms made the peak emissions of (4-Cl-bt)(2)Ir(acac) and (4-Br-bt)(2)Ir(acac) slightly blue shift to 554 and 555 nm, respectively. The PhOLEDs using the four iridium complexes as dopants were initially fabricated in the conventional device structure (device I): ITO/MoO3/NPB/CBP/CBP:dopants/TPBi/LiF/Al. The three halogen-substituted analogues exhibited turn-on voltages of 3.5-3.9 V, maximum current efficiencies of 35.5-52.4 cd A(-1), maximum power efficiencies of 18.3-29.4 lm W-1 and maximum external quantum efficiencies (EQE) of 12.1-17.3%, which were superior than the (bt)(2)Ir(acac)-based device (28.4 cd A(-1), 19.9 lm W-1, 9.8%). After reducing the hole-injecting barrier and using better carrier-transporting materials in the optimized device II, ITO/MoO3/TAPC/TCTA/CBP:dopants/TmPyPB/LiF/Al, all the four devices exhibited lower turn-on voltages of 2.9-3.1 V and excellent performance with maximum EQE over 20%. As a result, they showed high power efficiencies in the range of 55.9-83.2 lm W-1. Among the four optimized devices, the (4-F-bt)(2)Ir(acac)-based device achieved the highest power efficiency of 83.2 lm W-1. Remarkably, the (bt)(2)Ir(acac)-based device still possessed high current efficiency of 53.5 cd A(-1), power efficiency of 23 lm W-1, and EQE of 19.6% at extremely high luminance of 10 000 cd m(-2). |
| 语种 | 英语 |
| WOS记录号 | WOS:000330162600041 |
| 出版者 | AMER CHEMICAL SOC |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/46875]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Ma, Dongge |
| 作者单位 | 1.Wuhan Univ, Dept Chem, Hubei Collaborat Innovat Ctr Adv Organ Chem Mat, Hubei Key Lab Organ & Polymer Optoelect Mat, Wuhan 430072, Peoples R China 2.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fan, Cong,Zhu, Liping,Jiang, Bei,et al. High Power Efficiency Yellow Phosphorescent OLEDs by Using New Iridium Complexes with Halogen-Substituted 2-Phenylbenzo[d]thiazole Ligands[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2013,117(37):19134-19141. |
| APA | Fan, Cong.,Zhu, Liping.,Jiang, Bei.,Li, Yifan.,Zhao, Fangchao.,...&Yang, Chuluo.(2013).High Power Efficiency Yellow Phosphorescent OLEDs by Using New Iridium Complexes with Halogen-Substituted 2-Phenylbenzo[d]thiazole Ligands.JOURNAL OF PHYSICAL CHEMISTRY C,117(37),19134-19141. |
| MLA | Fan, Cong,et al."High Power Efficiency Yellow Phosphorescent OLEDs by Using New Iridium Complexes with Halogen-Substituted 2-Phenylbenzo[d]thiazole Ligands".JOURNAL OF PHYSICAL CHEMISTRY C 117.37(2013):19134-19141. |
入库方式： OAI收割
来源：化学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。