High mobility organic thin-film transistors based on p-p heterojunction buffer layer
文献类型：期刊论文
| 作者 | Qian, Xianrui1,2; Wang, Tong1; Yan, Donghang1 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2013-10-21 |
| 卷号 | 103期号:17 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.4826676 |
| 英文摘要 | The p-p heterojunction of 5, 6, 11, 12-tetraphenylnaphthacene/vanadyl phthalocyanine, which has been used as the buffer layer, is demonstrated. The highest field-effect mobility is 5.1 cm(2)/Vs, which is one of the highest reported for polycrystalline rubrene thin film transistors. Current versus voltage characteristics of heterojunction diodes are utilized to investigate the charge injection mechanism, revealing the factors that bring about the improvement of carrier injection and the reduction of contact resistance. These results suggest that our approach is very promising to fabricate high performance organic thin-film transistors for practical applications in organic electronics. (C) 2013 AIP Publishing LLC. |
| 语种 | 英语 |
| WOS记录号 | WOS:000326455100087 |
| 出版者 | AMER INST PHYSICS |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/46881]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Qian, Xianrui |
| 作者单位 | 1.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Qian, Xianrui,Wang, Tong,Yan, Donghang. High mobility organic thin-film transistors based on p-p heterojunction buffer layer[J]. APPLIED PHYSICS LETTERS,2013,103(17). |
| APA | Qian, Xianrui,Wang, Tong,&Yan, Donghang.(2013).High mobility organic thin-film transistors based on p-p heterojunction buffer layer.APPLIED PHYSICS LETTERS,103(17). |
| MLA | Qian, Xianrui,et al."High mobility organic thin-film transistors based on p-p heterojunction buffer layer".APPLIED PHYSICS LETTERS 103.17(2013). |
入库方式： OAI收割
来源：化学研究所
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