High reliability of vanadyl-phthalocyanine thin-film transistors using silicon nitride gate insulator
文献类型：期刊论文
| 作者 | Wang, Lijuan1; Qin, Haitao2; Zhang, Wei2; Zhang, Long1; Yan, Donghang3 |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2013-10-31 |
| 卷号 | 545页码:514-516 |
| 关键词 | Organic Thin Film Transistors Vanadyl-phthalocyanine Silicon Nitride Reliability Threshold Voltage |
| ISSN号 | 0040-6090 |
| DOI | 10.1016/j.tsf.2013.07.044 |
| 英文摘要 | The reliability of vanadyl-phthalocyanine (VOPc) thin filmtransistors (TFTs) with silicon nitride (SiNx) gate insulator was investigated under bias stress conditions. The shift of threshold voltage in ambient air, in vacuum and at high temperature was discussed. The initial field-effect mobility and threshold voltage were 1.2 cm(2)/Vs and -4.22 V, respectively. After a gate bias stress of -20 V for 10,000 s in ambient air, the threshold voltage showed a small shift of less than 0.6 V. In vacuum at high temperature, the shifts of threshold voltage were also below 1 V and current change of devices under the same bias condition was negligible. The excellent reliability was attributed to the reduction of interface defect states between VOPc film and SiNx gate insulator. These results show that VOPc TFTs using SiNx insulator hold a great promise of application in active-matrix organic light emitting displays. (C) 2013 Elsevier B.V. All rights reserved. |
| 语种 | 英语 |
| WOS记录号 | WOS:000324820800085 |
| 出版者 | ELSEVIER SCIENCE SA |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/47103]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Wang, Lijuan |
| 作者单位 | 1.Changchun Univ Technol, Sch Chem Engn, Changchun 130022, Peoples R China 2.Changchun Univ Sci & Technol, Sch Sci, Changchun 130022, Peoples R China 3.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Lijuan,Qin, Haitao,Zhang, Wei,et al. High reliability of vanadyl-phthalocyanine thin-film transistors using silicon nitride gate insulator[J]. THIN SOLID FILMS,2013,545:514-516. |
| APA | Wang, Lijuan,Qin, Haitao,Zhang, Wei,Zhang, Long,&Yan, Donghang.(2013).High reliability of vanadyl-phthalocyanine thin-film transistors using silicon nitride gate insulator.THIN SOLID FILMS,545,514-516. |
| MLA | Wang, Lijuan,et al."High reliability of vanadyl-phthalocyanine thin-film transistors using silicon nitride gate insulator".THIN SOLID FILMS 545(2013):514-516. |
入库方式： OAI收割
来源：化学研究所
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