Tunable Spin-Orbit Interaction in Trilayer Graphene Exemplified in Electric-Double-Layer Transistors
文献类型：期刊论文
| 作者 | Chen, Zhuoyu1,2; Yuan, Hongtao1,2; Zhang, Yanfeng3; Nomura, Kentaro4; Gao, Teng3; Gao, Yabo3; Shimotani, Hidekazu1,2; Liu, Zhongfan3; Iwasa, Yoshihiro1,2,4 |
| 刊名 | NANO LETTERS
 |
| 出版日期 | 2012-05-01 |
| 卷号 | 12期号:5页码:2212-2216 |
| ISSN号 | 1530-6984 |
| 关键词 | Spin-orbit Interaction Trilayer Graphene Liquid Gating Magnetotransport |
| DOI | 10.1021/nl204012c |
| 英文摘要 | Taking advantage of ultrahigh electric field generated in electric-double-layer transistors (EDLTs), we investigated spin-orbit interaction (SOT) and its modulation in epitaxial trilayer graphene. It was found in magnetotransport that the dephasing length L-phi and spin relaxation length L-so of carriers can be effectively modulated with gate bias. As a direct result, SOI-induced weak antilocalization (WAL), together with a crossover from WAL to weak localization (WL), was observed at near-zero magnetic field. Interestingly, among existing localization models, only the Iordanskii-Lyanda-Geller-Pikus theory can successfully reproduce the obtained magnetoconductance well, serving as evidence for gate tuning of the weak but distinct SOI in graphene. Realization of SOI and its large tunability in the trilayer graphene EDLTs provides us with a possibility to electrically manipulate spin precession in graphene systems without ferromagnetics. |
| 语种 | 英语 |
| 出版者 | AMER CHEMICAL SOC |
| WOS记录号 | WOS:000303696400006 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/48279]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Yuan, Hongtao |
| 作者单位 | 1.Univ Tokyo, Quantum Phase Elect Ctr, Tokyo 1138656, Japan 2.Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan 3.Peking Univ, Coll Chem & Mol Engn, Beijing Natl Lab Mol Sci, Ctr Nanochem, Beijing 100871, Peoples R China 4.RIKEN, Correlated Elect Res Grp, Wako, Saitama 3510198, Japan |
| 推荐引用方式 GB/T 7714 | Chen, Zhuoyu,Yuan, Hongtao,Zhang, Yanfeng,et al. Tunable Spin-Orbit Interaction in Trilayer Graphene Exemplified in Electric-Double-Layer Transistors[J]. NANO LETTERS,2012,12(5):2212-2216. |
| APA | Chen, Zhuoyu.,Yuan, Hongtao.,Zhang, Yanfeng.,Nomura, Kentaro.,Gao, Teng.,...&Iwasa, Yoshihiro.(2012).Tunable Spin-Orbit Interaction in Trilayer Graphene Exemplified in Electric-Double-Layer Transistors.NANO LETTERS,12(5),2212-2216. |
| MLA | Chen, Zhuoyu,et al."Tunable Spin-Orbit Interaction in Trilayer Graphene Exemplified in Electric-Double-Layer Transistors".NANO LETTERS 12.5(2012):2212-2216. |
入库方式： OAI收割
来源：化学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。