Different growth behaviors of ambient pressure chemical vapor deposition graphene on Ni(111) and Ni films: A scanning tunneling microscopy study
文献类型：期刊论文
| 作者 | Zhang, Yanfeng1,2; Gao, Teng2; Xie, Shubao2; Dai, Boya2; Fu, Lei2; Gao, Yabo2; Chen, Yubin2; Liu, Mengxi2; Liu, Zhongfan2 |
| 刊名 | NANO RESEARCH
 |
| 出版日期 | 2012-06-01 |
| 卷号 | 5期号:6页码:402-411 |
| 关键词 | Graphene Scanning Tunneling Microscopy Chemical Vapor Deposition Grain Boundary Nickel |
| ISSN号 | 1998-0124 |
| DOI | 10.1007/s12274-012-0221-6 |
| 英文摘要 | Graphene growth on the same metal substrate with different crystal morphologies, such as single crystalline and polycrystalline, may involve different mechanisms. We deal with this issue by preparing graphene on single crystal Ni(111) and on similar to 300 nm thick Ni films on SiO2 using an ambient pressure chemical vapor deposition (APCVD) method, and analyze the different growth behaviors for different growth parameters by atomically-resolved scanning tunneling microscopy (STM) and complementary macroscopic analysis methods. Interestingly, we obtained monolayer graphene on Ni(111), and multilayer graphene on Ni films under the same growth conditions. Based on the experimental results, it is proposed that the graphene growth on Ni(111) is strongly templated by the Ni(111) lattice due to the strong Ni-C interactions, leading to monolayer graphene growth. Multilayer graphene flakes formed on polycrystalline Ni films are usually stacked with deviations from the Bernal stacking type and show small rotations among the carbon layers. Considering the different substrate features, the inevitable grain boundaries on polycrystalline Ni films are considered to serve as the growth fronts for bilayer and even multilayer graphene. |
| 语种 | 英语 |
| WOS记录号 | WOS:000305529900004 |
| 出版者 | TSINGHUA UNIV PRESS |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/48955]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Zhang, Yanfeng |
| 作者单位 | 1.Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China 2.Peking Univ, Coll Chem & Mol Engn, Ctr Nanochem CNC,Beijing Natl Lab Mol Sci, State Key Lab Struct Chem Unstable & Stable Speci, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Yanfeng,Gao, Teng,Xie, Shubao,et al. Different growth behaviors of ambient pressure chemical vapor deposition graphene on Ni(111) and Ni films: A scanning tunneling microscopy study[J]. NANO RESEARCH,2012,5(6):402-411. |
| APA | Zhang, Yanfeng.,Gao, Teng.,Xie, Shubao.,Dai, Boya.,Fu, Lei.,...&Liu, Zhongfan.(2012).Different growth behaviors of ambient pressure chemical vapor deposition graphene on Ni(111) and Ni films: A scanning tunneling microscopy study.NANO RESEARCH,5(6),402-411. |
| MLA | Zhang, Yanfeng,et al."Different growth behaviors of ambient pressure chemical vapor deposition graphene on Ni(111) and Ni films: A scanning tunneling microscopy study".NANO RESEARCH 5.6(2012):402-411. |
入库方式： OAI收割
来源：化学研究所
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