Toward Quantitative Prediction of Charge Mobility in Organic Semiconductors: Tunneling Enabled Hopping Model
文献类型:期刊论文
作者 | Geng, Hua3; Peng, Qian3; Wang, Linjun3; Li, Haijiao2; Liao, Yi2; Ma, Zhiying1; Shuai, Zhigang1 |
刊名 | ADVANCED MATERIALS
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出版日期 | 2012-07-10 |
卷号 | 24期号:26页码:3568-3572 |
关键词 | Organic Semiconductors Charge Mobility Dynamic Disorder Quantum Tunneling Effects |
ISSN号 | 0935-9648 |
DOI | 10.1002/adma.201104454 |
语种 | 英语 |
WOS记录号 | WOS:000305943900017 |
出版者 | WILEY-V C H VERLAG GMBH |
源URL | [http://ir.iccas.ac.cn/handle/121111/49127] ![]() |
专题 | 中国科学院化学研究所 |
通讯作者 | Shuai, Zhigang |
作者单位 | 1.Tsinghua Univ, Dept Chem, Key Lab Organ OptoElect & Mol Engn, Beijing 100084, Peoples R China 2.Capital Normal Univ, Dept Chem, Beijing 100037, Peoples R China 3.Chinese Acad Sci, Inst Chem, BNLMS, Key Lab Organ Solids, Beijing 100190, Peoples R China |
推荐引用方式 GB/T 7714 | Geng, Hua,Peng, Qian,Wang, Linjun,et al. Toward Quantitative Prediction of Charge Mobility in Organic Semiconductors: Tunneling Enabled Hopping Model[J]. ADVANCED MATERIALS,2012,24(26):3568-3572. |
APA | Geng, Hua.,Peng, Qian.,Wang, Linjun.,Li, Haijiao.,Liao, Yi.,...&Shuai, Zhigang.(2012).Toward Quantitative Prediction of Charge Mobility in Organic Semiconductors: Tunneling Enabled Hopping Model.ADVANCED MATERIALS,24(26),3568-3572. |
MLA | Geng, Hua,et al."Toward Quantitative Prediction of Charge Mobility in Organic Semiconductors: Tunneling Enabled Hopping Model".ADVANCED MATERIALS 24.26(2012):3568-3572. |
入库方式: OAI收割
来源:化学研究所
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