中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Toward Quantitative Prediction of Charge Mobility in Organic Semiconductors: Tunneling Enabled Hopping Model

文献类型:期刊论文

作者Geng, Hua3; Peng, Qian3; Wang, Linjun3; Li, Haijiao2; Liao, Yi2; Ma, Zhiying1; Shuai, Zhigang1
刊名ADVANCED MATERIALS
出版日期2012-07-10
卷号24期号:26页码:3568-3572
关键词Organic Semiconductors Charge Mobility Dynamic Disorder Quantum Tunneling Effects
ISSN号0935-9648
DOI10.1002/adma.201104454
语种英语
WOS记录号WOS:000305943900017
出版者WILEY-V C H VERLAG GMBH
源URL[http://ir.iccas.ac.cn/handle/121111/49127]  
专题中国科学院化学研究所
通讯作者Shuai, Zhigang
作者单位1.Tsinghua Univ, Dept Chem, Key Lab Organ OptoElect & Mol Engn, Beijing 100084, Peoples R China
2.Capital Normal Univ, Dept Chem, Beijing 100037, Peoples R China
3.Chinese Acad Sci, Inst Chem, BNLMS, Key Lab Organ Solids, Beijing 100190, Peoples R China
推荐引用方式
GB/T 7714
Geng, Hua,Peng, Qian,Wang, Linjun,et al. Toward Quantitative Prediction of Charge Mobility in Organic Semiconductors: Tunneling Enabled Hopping Model[J]. ADVANCED MATERIALS,2012,24(26):3568-3572.
APA Geng, Hua.,Peng, Qian.,Wang, Linjun.,Li, Haijiao.,Liao, Yi.,...&Shuai, Zhigang.(2012).Toward Quantitative Prediction of Charge Mobility in Organic Semiconductors: Tunneling Enabled Hopping Model.ADVANCED MATERIALS,24(26),3568-3572.
MLA Geng, Hua,et al."Toward Quantitative Prediction of Charge Mobility in Organic Semiconductors: Tunneling Enabled Hopping Model".ADVANCED MATERIALS 24.26(2012):3568-3572.

入库方式: OAI收割

来源:化学研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。