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A stable solution-processed polymer semiconductor with record high-mobility for printed transistors
文献类型：期刊论文
| 作者 | Li, Jun1; Zhao, Yan2; Tan, Huei Shuan1; Guo, Yunlong2; Di, Chong-An2; Yu, Gui2; Liu, Yunqi2; Lin, Ming1; Lim, Suo Hon1; Zhou, Yuhua5 |
| 刊名 | SCIENTIFIC REPORTS
 |
| 出版日期 | 2012-10-18 |
| 卷号 | 2 |
| ISSN号 | 2045-2322 |
| DOI | 10.1038/srep00754 |
| 英文摘要 | Microelectronic circuits/arrays produced via high-speed printing instead of traditional photolithographic processes offer an appealing approach to creating the long-sought after, low-cost, large-area flexible electronics. Foremost among critical enablers to propel this paradigm shift in manufacturing is a stable, solution-processable, high-performance semiconductor for printing functionally capable thin-film transistors - fundamental building blocks of microelectronics. We report herein the processing and optimisation of solution-processable polymer semiconductors for thin-film transistors, demonstrating very high field-effect mobility, high on/off ratio, and excellent shelf-life and operating stabilities under ambient conditions. Exceptionally high-gain inverters and functional ring oscillator devices on flexible substrates have been demonstrated. This optimised polymer semiconductor represents a significant progress in semiconductor development, dispelling prevalent skepticism surrounding practical usability of organic semiconductors for high-performance microelectronic devices, opening up application opportunities hitherto functionally or economically inaccessible with silicon technologies, and providing an excellent structural framework for fundamental studies of charge transport in organic systems. |
| 语种 | 英语 |
| WOS记录号 | WOS:000310448300003 |
| 出版者 | NATURE PUBLISHING GROUP |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/49161]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Ong, Beng S. |
| 作者单位 | 1.Agcy Sci Technol & Res, Inst Mat Res & Engn, Singapore 117602, Singapore 2.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China 3.Hong Kong Baptist Univ, Inst Creat, Kowloon, Hong Kong, Peoples R China 4.Hong Kong Baptist Univ, Dept Chem, Kowloon, Hong Kong, Peoples R China 5.Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore 6.Nanyang Technol Univ, Sch Chem & Biomed Engn, Singapore 639798, Singapore |
| 推荐引用方式 GB/T 7714 | Li, Jun,Zhao, Yan,Tan, Huei Shuan,et al. A stable solution-processed polymer semiconductor with record high-mobility for printed transistors[J]. SCIENTIFIC REPORTS,2012,2. |
| APA | Li, Jun.,Zhao, Yan.,Tan, Huei Shuan.,Guo, Yunlong.,Di, Chong-An.,...&Ong, Beng S..(2012).A stable solution-processed polymer semiconductor with record high-mobility for printed transistors.SCIENTIFIC REPORTS,2. |
| MLA | Li, Jun,et al."A stable solution-processed polymer semiconductor with record high-mobility for printed transistors".SCIENTIFIC REPORTS 2(2012). |
入库方式： OAI收割
来源：化学研究所
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