Organic thin-film transistor memory with Ag floating-gate
文献类型：期刊论文
| 作者 | Wang, Wei1; Ma, Dongge2; Gao, Qiang1 |
| 刊名 | MICROELECTRONIC ENGINEERING
 |
| 出版日期 | 2012-03-01 |
| 卷号 | 91页码:9-13 |
| 关键词 | Organic Thin-film Transistor Floating-gate Silver Nanoparticles Memory |
| ISSN号 | 0167-9317 |
| DOI | 10.1016/j.mee.2011.11.006 |
| 英文摘要 | Organic thin-film transistor memories were realized by inserting a floating-gate layer in the Nylon 6 gate dielectrics. The transistors presented significant hysteresis behaviors and memory effect. The performance of the transistor memories, such as the memory window and the retention time, was improved greatly by using the separated silver nanoparticles instead of the silver film as the floating-gate. After the ITO source-drain electrode of the transistors treated by the oxygen plasma, the performance was further improved. The operation mechanism of the presented transistor memories was also provided and discussed. (C) 2011 Elsevier B.V. All rights reserved. |
| 语种 | 英语 |
| WOS记录号 | WOS:000300919000002 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/49207]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Wang, Wei |
| 作者单位 | 1.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China 2.Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Wei,Ma, Dongge,Gao, Qiang. Organic thin-film transistor memory with Ag floating-gate[J]. MICROELECTRONIC ENGINEERING,2012,91:9-13. |
| APA | Wang, Wei,Ma, Dongge,&Gao, Qiang.(2012).Organic thin-film transistor memory with Ag floating-gate.MICROELECTRONIC ENGINEERING,91,9-13. |
| MLA | Wang, Wei,et al."Organic thin-film transistor memory with Ag floating-gate".MICROELECTRONIC ENGINEERING 91(2012):9-13. |
入库方式： OAI收割
来源：化学研究所
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