Synthesis, experimental and theoretical characterization, and field-effect transistor properties of a new class of dibenzothiophene derivatives: From linear to cyclic architectures
文献类型：期刊论文
| 作者 | Qiao, Yali3; Wei, Zhongming3; Risko, Chad1,2; Li, Hong1,2; Bredas, Jean-Luc1,2,4; Xu, Wei3; Zhu, Daoben3 |
| 刊名 | JOURNAL OF MATERIALS CHEMISTRY
 |
| 出版日期 | 2012 |
| 卷号 | 22期号:4页码:1313-1325 |
| ISSN号 | 0959-9428 |
| DOI | 10.1039/c1jm13962b |
| 英文摘要 | We report the synthesis and characterization of a bis-dibenzothiophene cyclic dimer containing bisethylene linkages (DBT-CM) and of the corresponding mono-ethylene-linked 'linear' cis- and transisomers (cis-and trans-DBT-LM, respectively). The varied molecular architectures lead to notable differences both in terms of the solid-state packing and the molecular electronic and optical properties. X-ray crystallography reveals that the cyclic architecture of DBT-CM leads to a more densely packed stacking configuration that imparts stronger intermolecular electronic coupling for both hole and electron transport amongst adjacent molecules, while characterization of the thin-film morphology and crystallinity uncovers important temperature-dependent properties of the films as a function of the molecular architecture. Moreover, the redox, electronic structure, and optical properties of DBT-CM vary distinctly from those of its linear counterparts. The intramolecular reorganization energies for hole and electron transport for DBT-CM are markedly smaller than the linear counterparts, while the dispersion for the highest valence band (and the intermolecular electronic coupling for hole transport) is the largest for the series. The more favorable molecular packing/morphology characteristics and charge-transport properties (within the Marcus framework) of DBT-CM manifest themselves in thin-film field-effect transistor studies, where a field-effect hole-carrier mobility 0.026 cm(2) V(-1) s(-1) is measured, a value one-order-of-magnitude larger than either linear analog. |
| 语种 | 英语 |
| WOS记录号 | WOS:000298878100012 |
| 出版者 | ROYAL SOC CHEMISTRY |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/49487]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Bredas, Jean-Luc |
| 作者单位 | 1.Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA 2.Georgia Inst Technol, Ctr Organ Photon & Elect, Atlanta, GA 30332 USA 3.Chinese Acad Sci, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 100080, Peoples R China 4.King Abdulaziz Univ, Dept Chem, Jeddah 21589, Saudi Arabia |
| 推荐引用方式 GB/T 7714 | Qiao, Yali,Wei, Zhongming,Risko, Chad,et al. Synthesis, experimental and theoretical characterization, and field-effect transistor properties of a new class of dibenzothiophene derivatives: From linear to cyclic architectures[J]. JOURNAL OF MATERIALS CHEMISTRY,2012,22(4):1313-1325. |
| APA | Qiao, Yali.,Wei, Zhongming.,Risko, Chad.,Li, Hong.,Bredas, Jean-Luc.,...&Zhu, Daoben.(2012).Synthesis, experimental and theoretical characterization, and field-effect transistor properties of a new class of dibenzothiophene derivatives: From linear to cyclic architectures.JOURNAL OF MATERIALS CHEMISTRY,22(4),1313-1325. |
| MLA | Qiao, Yali,et al."Synthesis, experimental and theoretical characterization, and field-effect transistor properties of a new class of dibenzothiophene derivatives: From linear to cyclic architectures".JOURNAL OF MATERIALS CHEMISTRY 22.4(2012):1313-1325. |
入库方式： OAI收割
来源：化学研究所
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