Epitaxial growth of large-area bilayer graphene on Ru(0001)
文献类型：期刊论文
| 作者 | Que, Yande1; Xiao, Wende1; Fei, Xiangmin1; Chen, Hui1; Huang, Li1,2; Du, S. X.1; Gao, H. -J.1 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2014-03-03 |
| 卷号 | 104期号:9 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.4868021 |
| 英文摘要 | Large-area bilayer graphene (BG) is grown epitaxially on Ru(0001) surface and characterized by low temperature scanning tunneling microscopy. The lattice of the bottom layer of BG is stretched by 1.2%, while strain is absent from the top layer. The lattice mismatch between the two layers leads to the formation of a moire pattern with a periodicity of similar to 21.5 nm and a mixture of AA-and AB-stacking. The root 3 x root 3 superstructure around atomic defects is attributed to the inter-valley scattering of the delocalized p-electrons, demonstrating that the as-grown BG behaves like intrinsic free-standing graphene. (C) 2014 AIP Publishing LLC. |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000332729200091 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/50475]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Xiao, Wende |
| 作者单位 | 1.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Que, Yande,Xiao, Wende,Fei, Xiangmin,et al. Epitaxial growth of large-area bilayer graphene on Ru(0001)[J]. APPLIED PHYSICS LETTERS,2014,104(9). |
| APA | Que, Yande.,Xiao, Wende.,Fei, Xiangmin.,Chen, Hui.,Huang, Li.,...&Gao, H. -J..(2014).Epitaxial growth of large-area bilayer graphene on Ru(0001).APPLIED PHYSICS LETTERS,104(9). |
| MLA | Que, Yande,et al."Epitaxial growth of large-area bilayer graphene on Ru(0001)".APPLIED PHYSICS LETTERS 104.9(2014). |
入库方式： OAI收割
来源：化学研究所
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