中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High-performance hybrid organic-inorganic solar cell based on planar n-type silicon

文献类型:期刊论文

作者Chi, Dan1,2; Qi, Boyuan2; Wang, Jizheng2; Qu, Shengchun1; Wang, Zhanguo1
刊名APPLIED PHYSICS LETTERS
出版日期2014-05-12
卷号104期号:19
ISSN号0003-6951
DOI10.1063/1.4875913
英文摘要Hybrid organic-inorganic solar cells were fabricated by spin coating the hole transporting conductive poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film on n-type crystalline silicon (n-Si). By incorporating different additives into the PEDOT:PSS, the conductivity and wettability of PEDOT:PSS film are markedly improved, and the device performance is greatly enhanced accordingly. To further optimize the device performance, poly(3-hexylthiophene) (P3HT) layer was inserted between the n-Si and PEDOT:PSS layer. The P3HT layer blocks electrons from diffusing to the PEDOT:PSS, and hence reduces recombination at the anode side. The device eventually exhibits a high power conversion efficiency of 11.52%. (c) 2014 AIP Publishing LLC.
语种英语
WOS记录号WOS:000336918600081
出版者AMER INST PHYSICS
源URL[http://ir.iccas.ac.cn/handle/121111/50887]  
专题中国科学院化学研究所
通讯作者Chi, Dan
作者单位1.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China
推荐引用方式
GB/T 7714
Chi, Dan,Qi, Boyuan,Wang, Jizheng,et al. High-performance hybrid organic-inorganic solar cell based on planar n-type silicon[J]. APPLIED PHYSICS LETTERS,2014,104(19).
APA Chi, Dan,Qi, Boyuan,Wang, Jizheng,Qu, Shengchun,&Wang, Zhanguo.(2014).High-performance hybrid organic-inorganic solar cell based on planar n-type silicon.APPLIED PHYSICS LETTERS,104(19).
MLA Chi, Dan,et al."High-performance hybrid organic-inorganic solar cell based on planar n-type silicon".APPLIED PHYSICS LETTERS 104.19(2014).

入库方式: OAI收割

来源:化学研究所

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