Hole transport characteristics in phosphorescent dye-doped NPB films by admittance spectroscopy
文献类型：期刊论文
| 作者 | Wang, Ying1,2; Chen, Jiangshan2; Huang, Jinying2; Dai, Yanfeng2; Zhang, Zhiqiang2; Liu, Su1; Ma, Dongge2 |
| 刊名 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
 |
| 出版日期 | 2014-11-01 |
| 卷号 | 117期号:3页码:1125-1130 |
| ISSN号 | 0947-8396 |
| DOI | 10.1007/s00339-014-8478-0 |
| 英文摘要 | Admittance spectroscopy is a powerful tool to determine the carrier mobility. The carrier mobility is a significant parameter to understand the behavior or to optimize the organic light-emitting diode or other organic semiconductor devices. Hole transport in phosphorescent dye, bis[2-(9,9-diethyl-9H-fluoren-2-yl)-1-phenyl-1Hbenzoimidazol- N, C3] iridium(acetylacetonate [(fbi)(2)Ir(acac)]) doped into N, N-diphenyl-N, N-bis(1-naphthylphenyl)-1,1-biphenyl-4,4-diamine (NPB) films was investigated by admittance spectroscopy. The results show that doped (fbi)(2)Ir(acac) molecules behave as hole traps in NPB, and lower the hole mobility. For thicker films(greater than or similar to 300 nm), the electric field dependence of hole mobility is as expected positive, i.e., the mobility increases exponentially with the electric field. However, for thinner films (less than or similar to 300 nm), the electric field dependence of hole mobility is negative, i. e., the hole mobility decreases exponentially with the electric field. Physical mechanisms behind the negative field dependence of hole mobility are discussed. In addition, three frequency regions were divided to analyze the behaviors of the capacitance in the hole-only device and the physical mechanism was explained by trap theory and the parasitic capacitance effect. |
| 语种 | 英语 |
| WOS记录号 | WOS:000343911600021 |
| 出版者 | SPRINGER |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/50969]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Liu, Su |
| 作者单位 | 1.Lanzhou Univ, Sch Phys Sci & Technol, Inst Microelect, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Ying,Chen, Jiangshan,Huang, Jinying,et al. Hole transport characteristics in phosphorescent dye-doped NPB films by admittance spectroscopy[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2014,117(3):1125-1130. |
| APA | Wang, Ying.,Chen, Jiangshan.,Huang, Jinying.,Dai, Yanfeng.,Zhang, Zhiqiang.,...&Ma, Dongge.(2014).Hole transport characteristics in phosphorescent dye-doped NPB films by admittance spectroscopy.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,117(3),1125-1130. |
| MLA | Wang, Ying,et al."Hole transport characteristics in phosphorescent dye-doped NPB films by admittance spectroscopy".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 117.3(2014):1125-1130. |
入库方式： OAI收割
来源：化学研究所
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