Preparation of silicon nanowires by in situ doping and their electrical properties
文献类型：期刊论文
| 作者 | Wang, Jindong1; He, Gen2; Qin, Jinwen2; Li, Lidong1; Guo, Xuefeng2 |
| 刊名 | COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS
 |
| 出版日期 | 2014-05-20 |
| 卷号 | 450页码:156-160 |
| 关键词 | Nanowire Silicon Afm Wet Chemical Etch Electrical Measurement Dopant |
| ISSN号 | 0927-7757 |
| DOI | 10.1016/j.colsurfa.2014.03.028 |
| 英文摘要 | Individual silicon nanowires (SiNWs) doped by in situ dopant incorporation during growth of the SiNWs was investigated. Electrical charge transport measurements were taken before and after removing the material from the boron-doped SiNW surfaces by wet chemical etching. AFM (atomic force microscopy) images showed the radial cross section of the similar to 10 nm thick material that was cut off from the SiNW surface. The electrical transport characteristics after each etching cycle revealed the radial core-shell distribution of the activated dopants. The carrier concentration close to the surface of the boron-doped SiNWs was a factor of 6 higher than the value in the core. Using a simple, rapid and reliable technique, the natural distribution of the surface dopants in the SiNWs, which was distinct from many top-down fabricated NWs, explained the enhancement in the charge transport properties of these NWs. This could yield robust properties in ultra-small devices that are often dominated by random dopants fluctuations. (C) 2014 Elsevier B.V. All rights reserved. |
| 语种 | 英语 |
| WOS记录号 | WOS:000335274200020 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/51359]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Li, Lidong |
| 作者单位 | 1.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China 2.Peking Univ, Coll Chem & Mol Engn, State Key Lab Struct Chem Unstable & Stable Speci, Ctr Nanochem,Beijing Natl Lab Mol Sci, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Jindong,He, Gen,Qin, Jinwen,et al. Preparation of silicon nanowires by in situ doping and their electrical properties[J]. COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS,2014,450:156-160. |
| APA | Wang, Jindong,He, Gen,Qin, Jinwen,Li, Lidong,&Guo, Xuefeng.(2014).Preparation of silicon nanowires by in situ doping and their electrical properties.COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS,450,156-160. |
| MLA | Wang, Jindong,et al."Preparation of silicon nanowires by in situ doping and their electrical properties".COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS 450(2014):156-160. |
入库方式： OAI收割
来源：化学研究所
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