Defect-controlled synthesis of graphene based nano-size electronic devices using in situ thermal treatment
文献类型：期刊论文
| 作者 | He, Bing1; Shen, Yuxia2; Ren, Zhongjie1; Xiao, Chengyi3; Jiang, Wei3; Liu, Lili1; Yan, Shouke1; Wang, Zhaohui3; Yu, Zhongzhen2 |
| 刊名 | ORGANIC ELECTRONICS
 |
| 出版日期 | 2014-03-01 |
| 卷号 | 15期号:3页码:685-691 |
| 关键词 | Graphite Oxide Few-layer Graphene Field-effect Transistor |
| ISSN号 | 1566-1199 |
| DOI | 10.1016/j.orgel.2013.12.029 |
| 英文摘要 | Defect-controllable reduction approach of graphene is demonstrated. By in situ thermal reduction from graphene oxide on silicon wafer (300 nm SiO2), large size (similar to 15 mu m) of single and few-layer graphene with highly improved electrical properties has been prepared. The effects of increasing annealing temperature on reducing the defect, restoring the lattice and enhancing the field-effect performance of graphene are proved. The characteristics of the sample were analyzed using optical microscope (OM), atomic force microscope (AFM), X-ray photoelectron spectra (XPS), Raman laser, semiconductor parameter analyzer and a micromanipulator. The devices based on the obtained few-layer graphene exhibit relatively high p-type transistor characteristics (6.2 cm(2)/V s) in the atmospheric environment. (C) 2014 Elsevier B. V. All rights reserved. |
| 语种 | 英语 |
| WOS记录号 | WOS:000331630700008 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/51367]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Yan, Shouke |
| 作者单位 | 1.Beijing Univ Chem Technol, State Key Lab Chem Resource Engn, Beijing 100029, Peoples R China 2.Beijing Univ Chem Technol, Dept Polymer Engn, Coll Mat Sci & Engn, State Key Lab Organ Inorgan Composites, Beijing 100029, Peoples R China 3.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | He, Bing,Shen, Yuxia,Ren, Zhongjie,et al. Defect-controlled synthesis of graphene based nano-size electronic devices using in situ thermal treatment[J]. ORGANIC ELECTRONICS,2014,15(3):685-691. |
| APA | He, Bing.,Shen, Yuxia.,Ren, Zhongjie.,Xiao, Chengyi.,Jiang, Wei.,...&Yu, Zhongzhen.(2014).Defect-controlled synthesis of graphene based nano-size electronic devices using in situ thermal treatment.ORGANIC ELECTRONICS,15(3),685-691. |
| MLA | He, Bing,et al."Defect-controlled synthesis of graphene based nano-size electronic devices using in situ thermal treatment".ORGANIC ELECTRONICS 15.3(2014):685-691. |
入库方式： OAI收割
来源：化学研究所
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