High-performance field-effect transistors based on furan-containing diketopyrrolopyrrole copolymer under a mild annealing temperature
文献类型：期刊论文
| 作者 | Chen, Huajie1,2; Guo, Yunlong1; Mao, Zupan1; Gao, Dong1; Yu, Gui1 |
| 刊名 | JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY
 |
| 出版日期 | 2014-07-15 |
| 卷号 | 52期号:14页码:1970-1977 |
| 关键词 | Charge Transport Conjugated Polymers Field-effect Transistors Furan-flanked Polymers High-performance Polymers Mild Annealing Temperature |
| ISSN号 | 0887-624X |
| DOI | 10.1002/pola.27204 |
| 英文摘要 | Two furan-flanked polymers poly{3,6-difuran-2-yl-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione-alt-thienylenevinylene} (PDVFs), with a highly -extended diketopyrrolopyrrole backbone, are developed for solution-processed high-performance polymer field-effect transistors (FETs). Atomic force microscopy and grazing incidence X-ray scattering analyses indicate that PDVF-8 and PDVF-10 films exhibit a similar nodular morphology with the ultrasmall lamellar distances of 16.84 and 18.98 angstrom, respectively. When compared with the reported polymers with the same alkyl substitutes, this is the smallest d-spacing value observed to date. This closed lamellar crystallinity facilitates charge carrier transport. Therefore, polymer thin-film transistors fabricated from as-spun PDVF-8 films exhibit a high hole mobility exceeding 1.0 cm2 V-1 s-1 with a current on/off ratio above 106. After annealing treatment at 100 degrees C in air, the highest hole mobility of PDVF-8-based FETs was significantly improved to 1.90 cm2 V-1 s-1, which is among the highest values of the reported FET devices fabricated from polymer thin films based on this mild annealing temperature. In contrast, long alkyl-substituted PDVF-10 exhibited a relatively low hole mobility of 1.65 cm2 V-1 s-1 mainly resulting from low molecular weight. This work demonstrated that PDVFs would be promising semiconductors for developing cost-effective and large-scale production of flexible organic electronics. (c) 2014 Wiley Periodicals, Inc. |
| 语种 | 英语 |
| WOS记录号 | WOS:000337682100006 |
| 出版者 | WILEY-BLACKWELL |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/52021]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Yu, Gui |
| 作者单位 | 1.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 100190, Peoples R China 2.Xiangtan Univ, Coll Chem, Key Lab Environm Friendly Chem & Applicat, Minist Educ, Xiangtan 411105, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, Huajie,Guo, Yunlong,Mao, Zupan,et al. High-performance field-effect transistors based on furan-containing diketopyrrolopyrrole copolymer under a mild annealing temperature[J]. JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY,2014,52(14):1970-1977. |
| APA | Chen, Huajie,Guo, Yunlong,Mao, Zupan,Gao, Dong,&Yu, Gui.(2014).High-performance field-effect transistors based on furan-containing diketopyrrolopyrrole copolymer under a mild annealing temperature.JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY,52(14),1970-1977. |
| MLA | Chen, Huajie,et al."High-performance field-effect transistors based on furan-containing diketopyrrolopyrrole copolymer under a mild annealing temperature".JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY 52.14(2014):1970-1977. |
入库方式： OAI收割
来源：化学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。