Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene-Based Field-Effect Transistors
文献类型：期刊论文
| 作者 | Wang, Lifeng1,2; Wu, Bin1; Chen, Jisi1; Liu, Hongtao1; Hu, Pingan2; Liu, Yunqi1 |
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2014-03-01 |
| 卷号 | 26期号:10页码:1559-1564 |
| 关键词 | Hexagonal Boron Nitride Graphene Interfaces Chemical Vapor Deposition Electronic Devices |
| ISSN号 | 0935-9648 |
| DOI | 10.1002/adma.201304937 |
| 语种 | 英语 |
| WOS记录号 | WOS:000332476600006 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/52745]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Hu, Pingan |
| 作者单位 | 1.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Key Lab Organ Solids, Beijing 100190, Peoples R China 2.Harbin Inst Technol, Key Lab Microsyst & Microstruct, Harbin 150080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Lifeng,Wu, Bin,Chen, Jisi,et al. Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene-Based Field-Effect Transistors[J]. ADVANCED MATERIALS,2014,26(10):1559-1564. |
| APA | Wang, Lifeng,Wu, Bin,Chen, Jisi,Liu, Hongtao,Hu, Pingan,&Liu, Yunqi.(2014).Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene-Based Field-Effect Transistors.ADVANCED MATERIALS,26(10),1559-1564. |
| MLA | Wang, Lifeng,et al."Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene-Based Field-Effect Transistors".ADVANCED MATERIALS 26.10(2014):1559-1564. |
入库方式： OAI收割
来源：化学研究所
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