中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Epitaxial Growth of Asymmetrically-Doped Bilayer Graphene for Photocurrent Generation

文献类型:期刊论文

作者Zhou, Yu1; Yan, Kai1; Wu, Di1; Zhao, Shuli1; Lin, Li1; Jin, Li2; Liao, Lei1; Wang, Huan1; Fu, Qiang2; Bao, Xinhe2
刊名SMALL
出版日期2014-06-12
卷号10期号:11页码:2245-2250
ISSN号1613-6810
DOI10.1002/smll.201303696
语种英语
WOS记录号WOS:000337799300012
出版者WILEY-V C H VERLAG GMBH
源URL[http://ir.iccas.ac.cn/handle/121111/53011]  
专题中国科学院化学研究所
通讯作者Peng, Hailin
作者单位1.Peking Univ, Acad Adv Interdisciplinary Studies, Coll Chem & Mol Engn, Ctr Nanochem,BNLMS,State Key Lab Struct Chem Unst, Beijing 100871, Peoples R China
2.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, Dalian 116023, Peoples R China
推荐引用方式
GB/T 7714
Zhou, Yu,Yan, Kai,Wu, Di,et al. Epitaxial Growth of Asymmetrically-Doped Bilayer Graphene for Photocurrent Generation[J]. SMALL,2014,10(11):2245-2250.
APA Zhou, Yu.,Yan, Kai.,Wu, Di.,Zhao, Shuli.,Lin, Li.,...&Liu, Zhongfan.(2014).Epitaxial Growth of Asymmetrically-Doped Bilayer Graphene for Photocurrent Generation.SMALL,10(11),2245-2250.
MLA Zhou, Yu,et al."Epitaxial Growth of Asymmetrically-Doped Bilayer Graphene for Photocurrent Generation".SMALL 10.11(2014):2245-2250.

入库方式: OAI收割

来源:化学研究所

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