中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Low-Temperature Solution-Processed Hydrogen Molybdenum and Vanadium Bronzes for an Efficient Hole-Transport Layer in Organic Electronics

文献类型:期刊论文

作者Xie, Fengxian1; Choy, Wallace C. H.1; Wang, Chuandao1; Li, Xinchen1; Zhang, Shaoqing2; Hou, Jianhui2
刊名ADVANCED MATERIALS
出版日期2013-04-11
卷号25期号:14页码:2051-2055
关键词Transition Metal Oxides Oxygen Vacancies Low Temperature Annealing Hole-transport Layers Polymer Solar Cells
ISSN号0935-9648
DOI10.1002/adma.201204425
英文摘要A simple one-step method is reported to synthesize low-temperature solution-processed transition metal oxides (TMOs) of molybdenum oxide and vanadium oxide with oxygen vacancies for a good hole-transport layer (HTL). The oxygen vacancy plays an essential role for TMOs when they are employed as HTLs: TMO films with excess oxygen are highly undesirable for their application in organic electronics.
语种英语
WOS记录号WOS:000317368500016
出版者WILEY-V C H VERLAG GMBH
源URL[http://ir.iccas.ac.cn/handle/121111/54327]  
专题中国科学院化学研究所
通讯作者Choy, Wallace C. H.
作者单位1.Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
2.Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China
推荐引用方式
GB/T 7714
Xie, Fengxian,Choy, Wallace C. H.,Wang, Chuandao,et al. Low-Temperature Solution-Processed Hydrogen Molybdenum and Vanadium Bronzes for an Efficient Hole-Transport Layer in Organic Electronics[J]. ADVANCED MATERIALS,2013,25(14):2051-2055.
APA Xie, Fengxian,Choy, Wallace C. H.,Wang, Chuandao,Li, Xinchen,Zhang, Shaoqing,&Hou, Jianhui.(2013).Low-Temperature Solution-Processed Hydrogen Molybdenum and Vanadium Bronzes for an Efficient Hole-Transport Layer in Organic Electronics.ADVANCED MATERIALS,25(14),2051-2055.
MLA Xie, Fengxian,et al."Low-Temperature Solution-Processed Hydrogen Molybdenum and Vanadium Bronzes for an Efficient Hole-Transport Layer in Organic Electronics".ADVANCED MATERIALS 25.14(2013):2051-2055.

入库方式: OAI收割

来源:化学研究所

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