High-mobility, air stable bottom-contact n-channel thin film transistors based on N,N '-ditridecyl perylene diimide
文献类型：期刊论文
| 作者 | Ma, Lanchao1,2; Guo, Yunlong1; Wen, Yugeng1; Liu, Yunqi1; Zhan, Xiaowei1,3 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2013-11-11 |
| 卷号 | 103期号:20 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.4831971 |
| 英文摘要 | Bottom-gate bottom-contact (BGBC) organic thin film transistors (OTFTs) based on N, N '-ditridecyl perylene diimide exhibit electron mobility as high as 3.54 cm(2) V-1 s(-1) in nitrogen, higher than that (1 cm(2) V-1 s(-1)) of bottom-gate top-contact devices. The better performance of BGBC configuration in N-2 is attributed to lower contact resistance, which is further reduced by thermal annealing. After thermally annealing the BGBC OTFTs at 180 degrees C, electron mobility as high as 3.5 cm(2) V-1 s(-1), current on/off ratio of 10(6) and threshold voltage of 9V are achieved in air, and the mobility retains above 1 cm(2) V-1 s(-1) after storage for two months in air. Thermal treatment enhanced crystalline grains, reduced grain boundaries, and suppressed the adsorption of H2O and O-2, leading to excellent performance in air. (C) 2013 AIP Publishing LLC. |
| 语种 | 英语 |
| WOS记录号 | WOS:000327818700093 |
| 出版者 | AMER INST PHYSICS |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/54547]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Liu, Yunqi |
| 作者单位 | 1.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ma, Lanchao,Guo, Yunlong,Wen, Yugeng,et al. High-mobility, air stable bottom-contact n-channel thin film transistors based on N,N '-ditridecyl perylene diimide[J]. APPLIED PHYSICS LETTERS,2013,103(20). |
| APA | Ma, Lanchao,Guo, Yunlong,Wen, Yugeng,Liu, Yunqi,&Zhan, Xiaowei.(2013).High-mobility, air stable bottom-contact n-channel thin film transistors based on N,N '-ditridecyl perylene diimide.APPLIED PHYSICS LETTERS,103(20). |
| MLA | Ma, Lanchao,et al."High-mobility, air stable bottom-contact n-channel thin film transistors based on N,N '-ditridecyl perylene diimide".APPLIED PHYSICS LETTERS 103.20(2013). |
入库方式： OAI收割
来源：化学研究所
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