Characterization of 1.9-and 1.4-nm ultrathin gate oxynitride by oxidation of nitrogen-implanted silicon substrate
文献类型：期刊论文
| 作者 | Xu, QX; Qian, H; Han, ZS; Lin, G; Liu, M; Chen, BQ; Zhu, CF; Wu, DX |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 出版日期 | 2004 |
| 卷号 | 51期号:1页码:113-120 |
| 关键词 | Boron Penetration Micro-roughness Of Interface Oxidation Of N-implanted Silicon Substrate Oxidation Retardation Tunneling Leakage Ultrathin Gate Oxynitride |
| ISSN号 | 0018-9383 |
| DOI | 10.1109/TED.2003.821389 |
| 英文摘要 | For gate oxide thinned down to 1.9 and 1.4 nm, conventional methods of incorporating nitrogen (N) in the gate oxide might become insufficient in stopping,boron penetration and obtaining lower tunneling leakage. In this paper, oxynitride gate dielectric grown by oxidation of N-implanted silicon substrate has been studied. The characteristics of ultrathin gate oxynitride with equivalent oxide thickness (EOT) of 1.9 and 1.4 mn grown by this method were analyzed with MOS capacitors under the accumulation conditions and compared with pure gate oxide and gate oxide nitrided by N2O annealing. EOT of 1.9- and 1.4-nm oxynitride gate dielectrics grown by this method have strong boron penetration resistance, and reduce gate tunneling leakage current remarkably. High-performance 36-nm gate length CMOS devices and CMOS 32 frequency dividers embedded with 57-stage/201-stage CMOS ring oscillator, respectively, have been fabricated successfully, where the EOT of gate oxynitride grown by this method is 1.4 nm. At power supply voltage V-DD of 1.5 V drive current Ion of 802 muA/mum for NMOS and -487 muA/mum for PMOS are achieved at off-state leakage I-off of 3.5 nA/mum for NMOS and -3.0 nA/mum for PMOS. |
| 语种 | 英语 |
| WOS记录号 | WOS:000187959600016 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/55287]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Xu, QX |
| 作者单位 | 1.Chinese Acad Sci, Res & Dev Ctr Microelect, Beijing 100029, Peoples R China 2.Chinese Acad Sci, Inst Chem, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, QX,Qian, H,Han, ZS,et al. Characterization of 1.9-and 1.4-nm ultrathin gate oxynitride by oxidation of nitrogen-implanted silicon substrate[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2004,51(1):113-120. |
| APA | Xu, QX.,Qian, H.,Han, ZS.,Lin, G.,Liu, M.,...&Wu, DX.(2004).Characterization of 1.9-and 1.4-nm ultrathin gate oxynitride by oxidation of nitrogen-implanted silicon substrate.IEEE TRANSACTIONS ON ELECTRON DEVICES,51(1),113-120. |
| MLA | Xu, QX,et al."Characterization of 1.9-and 1.4-nm ultrathin gate oxynitride by oxidation of nitrogen-implanted silicon substrate".IEEE TRANSACTIONS ON ELECTRON DEVICES 51.1(2004):113-120. |
入库方式： OAI收割
来源：化学研究所
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