Ambipolar thin-film field-effect transistor based on pentacene
文献类型：期刊论文
| 作者 | Wang, W; Shi, JW; Liang, C; Zhang, HM; Liu, MD; Quan, BF; Guo, SX; Fang, JF; Ma, DG |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2005-02-01 |
| 卷号 | 22期号:2页码:496-498 |
| ISSN号 | 0256-307X |
| 英文摘要 | Organic thin film field-effect transistors based on pentacene have been fabricated by the method of fully-evaporation. The present device with a thin insulator layer can operate in low voltage, and shows ambipolar mode. In the case of the p-channel, the field-effect hole mobility was calculated to be 0.17cm(2)/Vs, whereas the field-effect electron mobility was about 0.02cm(2)/Vs for n-channel. |
| 语种 | 英语 |
| WOS记录号 | WOS:000226685800064 |
| 出版者 | CHINESE PHYSICAL SOC |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/56291]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Wang, W |
| 作者单位 | 1.Jilin Univ, Natl Key Lab Integrated Optoelect, Changchun 130012, Peoples R China 2.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, W,Shi, JW,Liang, C,et al. Ambipolar thin-film field-effect transistor based on pentacene[J]. CHINESE PHYSICS LETTERS,2005,22(2):496-498. |
| APA | Wang, W.,Shi, JW.,Liang, C.,Zhang, HM.,Liu, MD.,...&Ma, DG.(2005).Ambipolar thin-film field-effect transistor based on pentacene.CHINESE PHYSICS LETTERS,22(2),496-498. |
| MLA | Wang, W,et al."Ambipolar thin-film field-effect transistor based on pentacene".CHINESE PHYSICS LETTERS 22.2(2005):496-498. |
入库方式： OAI收割
来源：化学研究所
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