Organic heterojunction with reverse rectifying characteristics and its application in field-effect transistors
文献类型:期刊论文
作者 | Wang, Haibo; Wang, Jun; Huang, Haichao; Yan, Xuanjun; Yan, Donghang |
刊名 | ORGANIC ELECTRONICS
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出版日期 | 2006-10-01 |
卷号 | 7期号:5页码:369-374 |
关键词 | Organic Heterojunction Phthalocyanine Interfacial Electronic Structure Field-effect Transistors Threshold Voltage |
ISSN号 | 1566-1199 |
DOI | 10.1016/j.orgel.2006.04.004 |
英文摘要 | A diode with a reverse rectifying characteristics was fabricated based on the organic heterojunction of copper phthalocyanine (CuPc) and copper-hexadecafluoro-phthalocyanine (F16CuPc). At the heterojunction interface, HOMO of CuPc is bended upwards and LUMO of F16CuPc is bended downwards, since the charge carriers were accumulated at both side of the interface, electrons in F16CuPc and holes in CuPc. The thickness of holes accumulated at the CuPc layer is about 10 nm. which was determined by fabricating organic field-effect transistors with active layers in series of thickness. By utilizing the heterojunction-effect, the threshold voltage in organic transistors can be modified. (C) 2006 Elsevier B.V. All rights reserved. |
语种 | 英语 |
WOS记录号 | WOS:000241956800017 |
出版者 | ELSEVIER SCIENCE BV |
源URL | [http://ir.iccas.ac.cn/handle/121111/58011] ![]() |
专题 | 中国科学院化学研究所 |
通讯作者 | Yan, Donghang |
作者单位 | Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, Haibo,Wang, Jun,Huang, Haichao,et al. Organic heterojunction with reverse rectifying characteristics and its application in field-effect transistors[J]. ORGANIC ELECTRONICS,2006,7(5):369-374. |
APA | Wang, Haibo,Wang, Jun,Huang, Haichao,Yan, Xuanjun,&Yan, Donghang.(2006).Organic heterojunction with reverse rectifying characteristics and its application in field-effect transistors.ORGANIC ELECTRONICS,7(5),369-374. |
MLA | Wang, Haibo,et al."Organic heterojunction with reverse rectifying characteristics and its application in field-effect transistors".ORGANIC ELECTRONICS 7.5(2006):369-374. |
入库方式: OAI收割
来源:化学研究所
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