中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Carbon nanotubes coated with alumina as gate dielectrics of field-effect transistors

文献类型:期刊论文

作者Fu, L; Liu, YQ; Liu, ZM; Han, BX; Cao, LC; Wei, DC; Yu, G; Zhu, DB
刊名ADVANCED MATERIALS
出版日期2006-01-19
卷号18期号:2页码:181-+
ISSN号0935-9648
DOI10.1002/adma.200501324
英文摘要Based on a simple low-temperature chemical solution method, multiwalled carbon nanotubes (MWCNTs) are coated discontinuously with a alumina gate-dielectric shell (see Figure) and application as p-type field-effect transistors is demonstrated. With a coating thickness of 8 nm, the drain current exceeds the gate current by a factor of 10(4)-10(5), confirming the excellent gate insulation provided by the alumina dielectric.
语种英语
WOS记录号WOS:000234993700006
出版者WILEY-V C H VERLAG GMBH
源URL[http://ir.iccas.ac.cn/handle/121111/58255]  
专题中国科学院化学研究所
通讯作者Liu, YQ
作者单位1.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing 100080, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100064, Peoples R China
推荐引用方式
GB/T 7714
Fu, L,Liu, YQ,Liu, ZM,et al. Carbon nanotubes coated with alumina as gate dielectrics of field-effect transistors[J]. ADVANCED MATERIALS,2006,18(2):181-+.
APA Fu, L.,Liu, YQ.,Liu, ZM.,Han, BX.,Cao, LC.,...&Zhu, DB.(2006).Carbon nanotubes coated with alumina as gate dielectrics of field-effect transistors.ADVANCED MATERIALS,18(2),181-+.
MLA Fu, L,et al."Carbon nanotubes coated with alumina as gate dielectrics of field-effect transistors".ADVANCED MATERIALS 18.2(2006):181-+.

入库方式: OAI收割

来源:化学研究所

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