Negative differential resistance and multilevel memory effects in organic devices
文献类型：期刊论文
| 作者 | Chen, Jiangshan; Xu, Liling; Lin, Jian; Geng, Yanhou; Wang, Lixiang; Ma, Dongge |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2006-08-01 |
| 卷号 | 21期号:8页码:1121-1124 |
| ISSN号 | 0268-1242 |
| DOI | 10.1088/0268-1242/21/8/024 |
| 英文摘要 | Negative differential resistance ( NDR) and multilevel memory effects were obtained in organic devices consisting of an anthracene derivative, 9,10-bis-{ 9,9-di-[ 4-(phenyl-p-tolyl-amino)-phenyl]-9H-fluoren-2-yl}-anthracene ( DAFA), sandwiched between Ag and ITO electrodes. The application of a negative bias voltage leads to negative differential resistance in current-voltage characteristics and different negative voltages produce different conductance currents, resulting in the multilevel memory capability of the devices. The NDR property has been attributed to charge trapping at the DAFA/Ag interface. This opens up a wide range of application possibilities of such organic-based NDR devices in memory and logic circuits. |
| 语种 | 英语 |
| WOS记录号 | WOS:000240123100025 |
| 出版者 | IOP PUBLISHING LTD |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/58489]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Chen, Jiangshan |
| 作者单位 | Chinese Acad Sci, Grad Sch, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, Jiangshan,Xu, Liling,Lin, Jian,et al. Negative differential resistance and multilevel memory effects in organic devices[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2006,21(8):1121-1124. |
| APA | Chen, Jiangshan,Xu, Liling,Lin, Jian,Geng, Yanhou,Wang, Lixiang,&Ma, Dongge.(2006).Negative differential resistance and multilevel memory effects in organic devices.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,21(8),1121-1124. |
| MLA | Chen, Jiangshan,et al."Negative differential resistance and multilevel memory effects in organic devices".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 21.8(2006):1121-1124. |
入库方式： OAI收割
来源：化学研究所
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