Field-effect transistors with good performance using new electron donor-pi-acceptor molecules as the active layers
文献类型:期刊论文
作者 | Wen, Guoyong; Wang, Ying; Song, Yabing; Lu, Zhengliang; Zhang, Deqing; Liu, Yunqi; Zhu, Daoben |
刊名 | CHEMICAL PHYSICS LETTERS
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出版日期 | 2006-11-24 |
卷号 | 431期号:4-6页码:370-374 |
ISSN号 | 0009-2614 |
DOI | 10.1016/j.cplett.2006.10.009 |
英文摘要 | Two new D-pi-A molecules 1 and 2 were prepared from the reaction between the Fisher's base and 7,7,8,8-tetracyano-p-quinodi-methane (TCNQ)/tetracyanoethylene (TCNE). OFETs with the thin-films of I and 2 as the active layers (semiconductors) were fabricated. These OFETs show relatively high mobility (up to 10(-2) cm(2) v(-1) s(-1)) and on/off ratio (up to 10(5)). In particular, these OFETs have rather low threshold voltages. (c) 2006 Elsevier B.V. All rights reserved. |
语种 | 英语 |
WOS记录号 | WOS:000242240700030 |
出版者 | ELSEVIER SCIENCE BV |
源URL | [http://ir.iccas.ac.cn/handle/121111/58639] ![]() |
专题 | 中国科学院化学研究所 |
通讯作者 | Zhang, Deqing |
作者单位 | 1.Chinese Acad Sci, Inst Chem, Organ Solids Lab, Beijing Natl Lab Mol Sci, Beijing 100080, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100080, Peoples R China |
推荐引用方式 GB/T 7714 | Wen, Guoyong,Wang, Ying,Song, Yabing,et al. Field-effect transistors with good performance using new electron donor-pi-acceptor molecules as the active layers[J]. CHEMICAL PHYSICS LETTERS,2006,431(4-6):370-374. |
APA | Wen, Guoyong.,Wang, Ying.,Song, Yabing.,Lu, Zhengliang.,Zhang, Deqing.,...&Zhu, Daoben.(2006).Field-effect transistors with good performance using new electron donor-pi-acceptor molecules as the active layers.CHEMICAL PHYSICS LETTERS,431(4-6),370-374. |
MLA | Wen, Guoyong,et al."Field-effect transistors with good performance using new electron donor-pi-acceptor molecules as the active layers".CHEMICAL PHYSICS LETTERS 431.4-6(2006):370-374. |
入库方式: OAI收割
来源:化学研究所
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