Improved n-type organic transistors by introducing organic heterojunction buffer layer under source/drain electrodes
文献类型：期刊论文
| 作者 | Yan, Xuanjun; Wang, Jun; Wang, Haibo; Wang, He; Yan, Donghang |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2006-07-31 |
| 卷号 | 89期号:5 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2227714 |
| 英文摘要 | N-type organic thin-film transistors (OTFTs) employing hexadecafluorophthalocyaninatocopper (F16CuPc) as active layer and p-type copper phthalocyanine (CuPc) as buffer layer are demonstrated. The highest field-effect mobility is 7.6x10(-2) cm(2)/V s. The improved performance was attributed to the decrease of contact resistance due to the introduction of highly conductive F16CuPc/CuPc organic heterojunction. Therefore, current method provides an effective path to improve the performance of OTFTs. (c) 2006 American Institute of Physics. |
| 语种 | 英语 |
| WOS记录号 | WOS:000239520200109 |
| 出版者 | AMER INST PHYSICS |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/59085]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Yan, Donghang |
| 作者单位 | Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yan, Xuanjun,Wang, Jun,Wang, Haibo,et al. Improved n-type organic transistors by introducing organic heterojunction buffer layer under source/drain electrodes[J]. APPLIED PHYSICS LETTERS,2006,89(5). |
| APA | Yan, Xuanjun,Wang, Jun,Wang, Haibo,Wang, He,&Yan, Donghang.(2006).Improved n-type organic transistors by introducing organic heterojunction buffer layer under source/drain electrodes.APPLIED PHYSICS LETTERS,89(5). |
| MLA | Yan, Xuanjun,et al."Improved n-type organic transistors by introducing organic heterojunction buffer layer under source/drain electrodes".APPLIED PHYSICS LETTERS 89.5(2006). |
入库方式： OAI收割
来源：化学研究所
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