中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Copper phthalocyanine based hybrid p-type permeable-base transistor in vertical architecture

文献类型:期刊论文

作者Feng, CG; Yi, MD; Yu, SY; Ma, DG; Feng, CG; Zhang, T; Meruvia, MS; Hummelgen, IA
刊名APPLIED PHYSICS LETTERS
出版日期2006-05-15
卷号88期号:20
ISSN号0003-6951
DOI10.1063/1.2204653
英文摘要We demonstrate the production of copper phthalocyanine (CuPc) based p-type hybrid permeable-base transistors, which operate at low voltages having high common-base current gains. These transistors are prepared by evaporating a thin metal layer (Ag or Al) that acts as base on top of a Si substrate that acts as collector. In the sequence CuPc and Au are thermally sublimated to produce the emitter, constituting a quite simple device production procedure with the additional advantage of allowing higher integration due to its vertical architecture. (c) 2006 American Institute of Physics.
语种英语
WOS记录号WOS:000237682100089
出版者AMER INST PHYSICS
源URL[http://ir.iccas.ac.cn/handle/121111/59753]  
专题中国科学院化学研究所
通讯作者Feng, CG; Feng, CG
作者单位1.Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
2.Jilin Univ, Natl Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
3.Univ Fed Parana, Dept Fis, Grp Organ Optoelect Devices, BR-81531990 Curitiba, Parana, Brazil
推荐引用方式
GB/T 7714
Feng, CG,Yi, MD,Yu, SY,et al. Copper phthalocyanine based hybrid p-type permeable-base transistor in vertical architecture[J]. APPLIED PHYSICS LETTERS,2006,88(20).
APA Feng, CG.,Yi, MD.,Yu, SY.,Ma, DG.,Feng, CG.,...&Hummelgen, IA.(2006).Copper phthalocyanine based hybrid p-type permeable-base transistor in vertical architecture.APPLIED PHYSICS LETTERS,88(20).
MLA Feng, CG,et al."Copper phthalocyanine based hybrid p-type permeable-base transistor in vertical architecture".APPLIED PHYSICS LETTERS 88.20(2006).

入库方式: OAI收割

来源:化学研究所

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