Copper phthalocyanine based hybrid p-type permeable-base transistor in vertical architecture
文献类型:期刊论文
作者 | Feng, CG; Yi, MD; Yu, SY; Ma, DG; Feng, CG; Zhang, T; Meruvia, MS; Hummelgen, IA |
刊名 | APPLIED PHYSICS LETTERS
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出版日期 | 2006-05-15 |
卷号 | 88期号:20 |
ISSN号 | 0003-6951 |
DOI | 10.1063/1.2204653 |
英文摘要 | We demonstrate the production of copper phthalocyanine (CuPc) based p-type hybrid permeable-base transistors, which operate at low voltages having high common-base current gains. These transistors are prepared by evaporating a thin metal layer (Ag or Al) that acts as base on top of a Si substrate that acts as collector. In the sequence CuPc and Au are thermally sublimated to produce the emitter, constituting a quite simple device production procedure with the additional advantage of allowing higher integration due to its vertical architecture. (c) 2006 American Institute of Physics. |
语种 | 英语 |
WOS记录号 | WOS:000237682100089 |
出版者 | AMER INST PHYSICS |
源URL | [http://ir.iccas.ac.cn/handle/121111/59753] ![]() |
专题 | 中国科学院化学研究所 |
通讯作者 | Feng, CG; Feng, CG |
作者单位 | 1.Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China 2.Jilin Univ, Natl Key Lab Integrated Optoelect, Changchun 130012, Peoples R China 3.Univ Fed Parana, Dept Fis, Grp Organ Optoelect Devices, BR-81531990 Curitiba, Parana, Brazil |
推荐引用方式 GB/T 7714 | Feng, CG,Yi, MD,Yu, SY,et al. Copper phthalocyanine based hybrid p-type permeable-base transistor in vertical architecture[J]. APPLIED PHYSICS LETTERS,2006,88(20). |
APA | Feng, CG.,Yi, MD.,Yu, SY.,Ma, DG.,Feng, CG.,...&Hummelgen, IA.(2006).Copper phthalocyanine based hybrid p-type permeable-base transistor in vertical architecture.APPLIED PHYSICS LETTERS,88(20). |
MLA | Feng, CG,et al."Copper phthalocyanine based hybrid p-type permeable-base transistor in vertical architecture".APPLIED PHYSICS LETTERS 88.20(2006). |
入库方式: OAI收割
来源:化学研究所
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