Lattice distortion of GaAsBi alloy grown on GaAs by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Takehara, Y; Yoshimoto, M; Huang, W; Saraie, J; Oe, K; Chayahara, A; Horino, Y |
| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
 |
| 出版日期 | 2006 |
| 卷号 | 45期号:1A页码:67-69 |
| 关键词 | Gaasbi Semimetal-semiconductor Alloy X-ray Diffraction Lattice Distortion Molecular Beam Epitaxy Rutherford Backscattering |
| ISSN号 | 0021-4922 |
| DOI | 10.1143/JJAP.45.67 |
| 英文摘要 | GaAs1-xBix alloys were grown on GaAs by molecular beam epitaxy (MBE). The lattice constants perpendicular and parallel to the surface of epilayers were estimated by high-resolution X-ray diffraction (XRD) analysis. The GaBi molar fraction was estimated by the Rutherford backscattering spectroscopy (RBS). GaAs1-xBix epilayers with GaBi molar fractions less than 5% were almost coherently grown on GaAs substrate with compressive strain. The lattice mismatch between GaAs1-xBix (x = 5%) and GaAs was estimated to be approximately 0.5%. |
| 语种 | 英语 |
| WOS记录号 | WOS:000235150700016 |
| 出版者 | INST PURE APPLIED PHYSICS |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/60267]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Takehara, Y |
| 作者单位 | 1.Kyoto Inst Technol, Dept Elect & Informat Sci, Sakyo Ku, Kyoto 6068585, Japan 2.Kyoto Inst Technol, Cooperat Res Ctr, Sakyo Ku, Kyoto 6068585, Japan 3.Chinese Acad Sci, Inst Chem, Lab High Tech Mat, Beijing 100080, Peoples R China 4.Natl Inst Adv Ind Sci & Technol Kansai, Ikeda, Osaka 5638577, Japan |
| 推荐引用方式 GB/T 7714 | Takehara, Y,Yoshimoto, M,Huang, W,et al. Lattice distortion of GaAsBi alloy grown on GaAs by molecular beam epitaxy[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,2006,45(1A):67-69. |
| APA | Takehara, Y.,Yoshimoto, M.,Huang, W.,Saraie, J.,Oe, K.,...&Horino, Y.(2006).Lattice distortion of GaAsBi alloy grown on GaAs by molecular beam epitaxy.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,45(1A),67-69. |
| MLA | Takehara, Y,et al."Lattice distortion of GaAsBi alloy grown on GaAs by molecular beam epitaxy".JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45.1A(2006):67-69. |
入库方式： OAI收割
来源：化学研究所
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