High current density tris(8-hydroxyquinoline) aluminum-based hybrid transistor in vertical architecture
文献类型：期刊论文
| 作者 | Yi, MD; Yu, SY; Ma, DG; Feng, CG; Zhang, T; Meruvia, MS; Hummelgen, IA |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2006-05-15 |
| 卷号 | 99期号:10 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.2200881 |
| 英文摘要 | We report the construction of hybrid permeable-base transistors, in vertical architecture, using tris(8-hydroxyquinoline) aluminum as emitter, a thin gold layer as base, and n-type silicon as collector. These transistors present high common-base current gain, can be operated at low driving voltages, and allow high current density. (c) 2006 American Institute of Physics. |
| 语种 | 英语 |
| WOS记录号 | WOS:000237943800068 |
| 出版者 | AMER INST PHYSICS |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/60269]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Ma, DG |
| 作者单位 | 1.Chinese Acad Sci, Grad Sch, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China 2.Jilin Univ, Natl Key Lab Integrated Optoelect, Changchun 130012, Peoples R China 3.Univ Fed Parana, Dept Fis, Grp Organ Optoelect Devices, BR-81531990 Curitiba, Parana, Brazil |
| 推荐引用方式 GB/T 7714 | Yi, MD,Yu, SY,Ma, DG,et al. High current density tris(8-hydroxyquinoline) aluminum-based hybrid transistor in vertical architecture[J]. JOURNAL OF APPLIED PHYSICS,2006,99(10). |
| APA | Yi, MD.,Yu, SY.,Ma, DG.,Feng, CG.,Zhang, T.,...&Hummelgen, IA.(2006).High current density tris(8-hydroxyquinoline) aluminum-based hybrid transistor in vertical architecture.JOURNAL OF APPLIED PHYSICS,99(10). |
| MLA | Yi, MD,et al."High current density tris(8-hydroxyquinoline) aluminum-based hybrid transistor in vertical architecture".JOURNAL OF APPLIED PHYSICS 99.10(2006). |
入库方式： OAI收割
来源：化学研究所
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