Tuning the threshold voltage by inserting a thin molybdenum oxide layer into organic field-effect transistors
文献类型：期刊论文
| 作者 | Guo, Yunlong; Liu, Yunqi; Di, Chong-an; Yu, Gui; Wu, Weiping; Ye, Shanghui; Wang, Ying; Xu, Xinjun; Sun, Yanming |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2007-12-24 |
| 卷号 | 91期号:26 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2822443 |
| 英文摘要 | The authors report on the organic field-effect transistors based on copper phthalocyanine with a inserted layer of molybdenum oxide (MoO(3)). After applying a positive gate voltage of 100 V, the threshold voltage had a large shift from -11.8 to +66.2 V and the device operating model was changed from the enhancement model into the depletion one. A possible mechanism is believed to be originated from the stored charges in the interface between the thin MoO(3) layer and the active layer. Largely reversible shift in the threshold voltage and retention time were also obtained in the devices by the programs used. (c) 2007 American Institute of Physics. |
| 语种 | 英语 |
| WOS记录号 | WOS:000251987400051 |
| 出版者 | AMER INST PHYSICS |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/61029]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Liu, Yunqi |
| 作者单位 | Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo, Yunlong,Liu, Yunqi,Di, Chong-an,et al. Tuning the threshold voltage by inserting a thin molybdenum oxide layer into organic field-effect transistors[J]. APPLIED PHYSICS LETTERS,2007,91(26). |
| APA | Guo, Yunlong.,Liu, Yunqi.,Di, Chong-an.,Yu, Gui.,Wu, Weiping.,...&Sun, Yanming.(2007).Tuning the threshold voltage by inserting a thin molybdenum oxide layer into organic field-effect transistors.APPLIED PHYSICS LETTERS,91(26). |
| MLA | Guo, Yunlong,et al."Tuning the threshold voltage by inserting a thin molybdenum oxide layer into organic field-effect transistors".APPLIED PHYSICS LETTERS 91.26(2007). |
入库方式： OAI收割
来源：化学研究所
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