Near infrared light-emitting diodes based on composites of near infrared dye, CdSe/CdS quantum dots and polymer
文献类型:期刊论文
作者 | Xuan, Yu; Zhao, Nana; Pan, Daocheng; Ji, Xiangling; Wang, Zhiyuan; Ma, Dongge |
刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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出版日期 | 2007-09-01 |
卷号 | 22期号:9页码:1021-1024 |
ISSN号 | 0268-1242 |
DOI | 10.1088/0268-1242/22/9/008 |
英文摘要 | Near infrared (NIR) light emitting diodes employing composites of an IR fluorescent dye, CdSe/CdScore/shell semiconductor quantum dots and poly( N-vinylcarbazole) (PVK) have been demonstrated. The device, with a configuration of indium-tin-oxide (ITO)//PEDOT:PSS//PVK:NIR Dye:CdSe/CdS//Al, had a turn-on voltage of 7 V, emitted the NIR light with a maximum at 890 nm and the irradiance intensity of 96 mu W. The electroluminescence efficiency of 0.02% was achieved at a current density of 13 mA cm(-2). |
语种 | 英语 |
WOS记录号 | WOS:000249755900009 |
出版者 | IOP PUBLISHING LTD |
源URL | [http://ir.iccas.ac.cn/handle/121111/61085] ![]() |
专题 | 中国科学院化学研究所 |
通讯作者 | Xuan, Yu |
作者单位 | Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Grad Sch, Changchun 130022, Peoples R China |
推荐引用方式 GB/T 7714 | Xuan, Yu,Zhao, Nana,Pan, Daocheng,et al. Near infrared light-emitting diodes based on composites of near infrared dye, CdSe/CdS quantum dots and polymer[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2007,22(9):1021-1024. |
APA | Xuan, Yu,Zhao, Nana,Pan, Daocheng,Ji, Xiangling,Wang, Zhiyuan,&Ma, Dongge.(2007).Near infrared light-emitting diodes based on composites of near infrared dye, CdSe/CdS quantum dots and polymer.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,22(9),1021-1024. |
MLA | Xuan, Yu,et al."Near infrared light-emitting diodes based on composites of near infrared dye, CdSe/CdS quantum dots and polymer".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 22.9(2007):1021-1024. |
入库方式: OAI收割
来源:化学研究所
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