High-mobility pentacene thin-film transistors with copolymer-gate dielectric
文献类型:期刊论文
作者 | Wang, Wei; Shi, Jiawei; Jiang, Wenhai; Guo, Shuxu; Zhang, Hongmei; Quan, Baofu; Ma, Dongge |
刊名 | MICROELECTRONICS JOURNAL
![]() |
出版日期 | 2007 |
卷号 | 38期号:1页码:27-30 |
关键词 | Thin-film Transistors Mobility |
ISSN号 | 0026-2692 |
DOI | 10.1016/j.mejo.2006.10.010 |
英文摘要 | Pentacene thin-film transistors have been obtained using polymethyl-methacrylate-co-glyciclyl-methacrylate (PNIMA-GMA) as the gate dielectric. The optimum active layer thickness in thin-film transistors (OTFTs) was investigated. The present devices show a wide operation voltage range. The on/off current ratio is as high as 10(5). In linear region (V-DS = -2V), the field-effect mobility of device increases with the increase in gate field at low-voltage region (V-G < - 20 V), and a mobility of 0.33 cm(2)/Vs can be obtained when V-G > 20 V. In saturation region, the mobility increases linearly with the gate field, and a high mobility of 1.14 cm(2)/Vs can be obtained at V-G = -95V. The influence of voltage on mobility of device was investigated. (c) 2006 Elsevier Ltd. All rights reserved. |
语种 | 英语 |
WOS记录号 | WOS:000243832300006 |
出版者 | ELSEVIER SCI LTD |
源URL | [http://ir.iccas.ac.cn/handle/121111/62737] ![]() |
专题 | 中国科学院化学研究所 |
通讯作者 | Wang, Wei |
作者单位 | 1.Jilin Univ, Coll Elect & Engn, Natl Key Lab Integrated Optoelect, Changchun 130012, Peoples R China 2.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, Wei,Shi, Jiawei,Jiang, Wenhai,et al. High-mobility pentacene thin-film transistors with copolymer-gate dielectric[J]. MICROELECTRONICS JOURNAL,2007,38(1):27-30. |
APA | Wang, Wei.,Shi, Jiawei.,Jiang, Wenhai.,Guo, Shuxu.,Zhang, Hongmei.,...&Ma, Dongge.(2007).High-mobility pentacene thin-film transistors with copolymer-gate dielectric.MICROELECTRONICS JOURNAL,38(1),27-30. |
MLA | Wang, Wei,et al."High-mobility pentacene thin-film transistors with copolymer-gate dielectric".MICROELECTRONICS JOURNAL 38.1(2007):27-30. |
入库方式: OAI收割
来源:化学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。