Large current gain and low operational voltage permeable metal-base organic transistors based on Au/Al double layer metal base
文献类型：期刊论文
| 作者 | Yi, Mingdong1; Huang, Jinying1; Ma, Dongge1; Huemmelgen, Ivo A.2 |
| 刊名 | ORGANIC ELECTRONICS
 |
| 出版日期 | 2008-08-01 |
| 卷号 | 9期号:4页码:539-544 |
| 关键词 | Permeable Metal Base Organic Transistors Au/al Double Layer Metal Base |
| ISSN号 | 1566-1199 |
| DOI | 10.1016/j.orgel.2008.02.018 |
| 英文摘要 | In order to realize the common-emitter characteristics of the tris(8-hydroxyquinoline) aluminium (Alq(3))-based organic transistors, we used Au/Al double metal layer as the base, thus the vertical metal-base transistors with structure of Al/n-Si/Au/Al/Alq(3)/LiF/Al were constructed. It was found that the contact properties between the base and the organic semiconductors play an important role in the device performance. The utilization of Au/Al double layer metal base allows the devices to operate at high gain in the common-emitter and common-base mode at low operational voltage. (C) 2008 Published by Elsevier B.V. |
| 语种 | 英语 |
| WOS记录号 | WOS:000257211600018 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/63311]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Ma, Dongge |
| 作者单位 | 1.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Grad Sch, Changchun 130022, Peoples R China 2.Univ Fed Parana, Dept Fis, Grp Organ Optoelect Devices, BR-81531900 Curitiba, Parana, Brazil |
| 推荐引用方式 GB/T 7714 | Yi, Mingdong,Huang, Jinying,Ma, Dongge,et al. Large current gain and low operational voltage permeable metal-base organic transistors based on Au/Al double layer metal base[J]. ORGANIC ELECTRONICS,2008,9(4):539-544. |
| APA | Yi, Mingdong,Huang, Jinying,Ma, Dongge,&Huemmelgen, Ivo A..(2008).Large current gain and low operational voltage permeable metal-base organic transistors based on Au/Al double layer metal base.ORGANIC ELECTRONICS,9(4),539-544. |
| MLA | Yi, Mingdong,et al."Large current gain and low operational voltage permeable metal-base organic transistors based on Au/Al double layer metal base".ORGANIC ELECTRONICS 9.4(2008):539-544. |
入库方式： OAI收割
来源：化学研究所
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