Fabrication of well-ordered CuO nanowire arrays by direct oxidation of sputter-deposited Cu(3)N film
文献类型:期刊论文
作者 | Fan, X. Y.1; Wu, Z. G.1; Yan, P. X.1,2; Geng, B. S.1; Li, H. J.1; Li, C.1; Zhang, P. J.1 |
刊名 | MATERIALS LETTERS
![]() |
出版日期 | 2008-04-30 |
卷号 | 62期号:12-13页码:1805-1808 |
关键词 | Well-ordered Cuo Nanowire Arrays Cu(3)n Film Direct Oxidation |
ISSN号 | 0167-577X |
DOI | 10.1016/j.matlet.2007.10.006 |
英文摘要 | Well-ordered CuO nanowire arrays were prepared through directly annealing the sputter-deposited Cu(3)N film at 300 degrees C for 90 min in atmosphere. The XRD and XPS results indicate that the Cu(3)N film completely changes to CuO without any other oxides such as after annealed. XPS results also indicate that there is also residual nitrogen in the CuO nanowire arrays. The FE-SEM and TEM images show that the CuO nanowire arrays are vertical to the substrate with a diameter of about 20 nm and a length of similar to 0.6 mu m. The growth mechanism is also discussed preliminarily. (c) 2007 Elsevier B.V. All rights reserved. |
语种 | 英语 |
WOS记录号 | WOS:000255612400017 |
出版者 | ELSEVIER SCIENCE BV |
源URL | [http://ir.iccas.ac.cn/handle/121111/63551] ![]() |
专题 | 中国科学院化学研究所 |
通讯作者 | Yan, P. X. |
作者单位 | 1.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Inst Chem & Phys, Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China |
推荐引用方式 GB/T 7714 | Fan, X. Y.,Wu, Z. G.,Yan, P. X.,et al. Fabrication of well-ordered CuO nanowire arrays by direct oxidation of sputter-deposited Cu(3)N film[J]. MATERIALS LETTERS,2008,62(12-13):1805-1808. |
APA | Fan, X. Y..,Wu, Z. G..,Yan, P. X..,Geng, B. S..,Li, H. J..,...&Zhang, P. J..(2008).Fabrication of well-ordered CuO nanowire arrays by direct oxidation of sputter-deposited Cu(3)N film.MATERIALS LETTERS,62(12-13),1805-1808. |
MLA | Fan, X. Y.,et al."Fabrication of well-ordered CuO nanowire arrays by direct oxidation of sputter-deposited Cu(3)N film".MATERIALS LETTERS 62.12-13(2008):1805-1808. |
入库方式: OAI收割
来源:化学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。