中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fabrication of well-ordered CuO nanowire arrays by direct oxidation of sputter-deposited Cu(3)N film

文献类型:期刊论文

作者Fan, X. Y.1; Wu, Z. G.1; Yan, P. X.1,2; Geng, B. S.1; Li, H. J.1; Li, C.1; Zhang, P. J.1
刊名MATERIALS LETTERS
出版日期2008-04-30
卷号62期号:12-13页码:1805-1808
关键词Well-ordered Cuo Nanowire Arrays Cu(3)n Film Direct Oxidation
ISSN号0167-577X
DOI10.1016/j.matlet.2007.10.006
英文摘要Well-ordered CuO nanowire arrays were prepared through directly annealing the sputter-deposited Cu(3)N film at 300 degrees C for 90 min in atmosphere. The XRD and XPS results indicate that the Cu(3)N film completely changes to CuO without any other oxides such as after annealed. XPS results also indicate that there is also residual nitrogen in the CuO nanowire arrays. The FE-SEM and TEM images show that the CuO nanowire arrays are vertical to the substrate with a diameter of about 20 nm and a length of similar to 0.6 mu m. The growth mechanism is also discussed preliminarily. (c) 2007 Elsevier B.V. All rights reserved.
语种英语
WOS记录号WOS:000255612400017
出版者ELSEVIER SCIENCE BV
源URL[http://ir.iccas.ac.cn/handle/121111/63551]  
专题中国科学院化学研究所
通讯作者Yan, P. X.
作者单位1.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
2.Chinese Acad Sci, Inst Chem & Phys, Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714
Fan, X. Y.,Wu, Z. G.,Yan, P. X.,et al. Fabrication of well-ordered CuO nanowire arrays by direct oxidation of sputter-deposited Cu(3)N film[J]. MATERIALS LETTERS,2008,62(12-13):1805-1808.
APA Fan, X. Y..,Wu, Z. G..,Yan, P. X..,Geng, B. S..,Li, H. J..,...&Zhang, P. J..(2008).Fabrication of well-ordered CuO nanowire arrays by direct oxidation of sputter-deposited Cu(3)N film.MATERIALS LETTERS,62(12-13),1805-1808.
MLA Fan, X. Y.,et al."Fabrication of well-ordered CuO nanowire arrays by direct oxidation of sputter-deposited Cu(3)N film".MATERIALS LETTERS 62.12-13(2008):1805-1808.

入库方式: OAI收割

来源:化学研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。