中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Tin (IV) phthalocyanine oxide: An air-stable semiconductor with high electron mobility

文献类型:期刊论文

作者Song, De; Zhu, Feng; Yu, Bo; Huang, Lizhen; Geng, Yanhou; Yana, Donghang
刊名APPLIED PHYSICS LETTERS
出版日期2008-04-07
卷号92期号:14
ISSN号0003-6951
DOI10.1063/1.2903486
英文摘要Air-stable n-type field effect transistors were fabricated with an axially oxygen substituted metal phthalocyanine, tin (IV) phthalocyanine oxide (SnOPc), as active layers. The SnOPc thin films showed highly crystallinity on modified dielectric layer, and the electron field-effect mobility reached 0.44 cm(2) V(-1) s(-1). After storage in air for 32 days, the mobility and on/off ratio did not obviously change. The above results also indicated that it is an effective approach of seeking n-type semiconductor by incorporating the appropriate metal connected with electron-withdrawing group into pi-pi conjugated system. (C) 2008 American Institute of Physics.
语种英语
WOS记录号WOS:000254940500090
出版者AMER INST PHYSICS
源URL[http://ir.iccas.ac.cn/handle/121111/63853]  
专题中国科学院化学研究所
通讯作者Yana, Donghang
作者单位Chinese Acad Sci, Grad Sch, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
推荐引用方式
GB/T 7714
Song, De,Zhu, Feng,Yu, Bo,et al. Tin (IV) phthalocyanine oxide: An air-stable semiconductor with high electron mobility[J]. APPLIED PHYSICS LETTERS,2008,92(14).
APA Song, De,Zhu, Feng,Yu, Bo,Huang, Lizhen,Geng, Yanhou,&Yana, Donghang.(2008).Tin (IV) phthalocyanine oxide: An air-stable semiconductor with high electron mobility.APPLIED PHYSICS LETTERS,92(14).
MLA Song, De,et al."Tin (IV) phthalocyanine oxide: An air-stable semiconductor with high electron mobility".APPLIED PHYSICS LETTERS 92.14(2008).

入库方式: OAI收割

来源:化学研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。