p-p isotype organic heterojunction and ambipolar field-effect transistors
文献类型：期刊论文
| 作者 | Wang, Haibo; Wang, Xiujin; Yu, Bo; Geng, Yanhou; Yan, Donghang |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2008-09-15 |
| 卷号 | 93期号:11 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2987481 |
| 英文摘要 | We realized ambipolar transport behavior in field-effect transistors by using p-p isotype heterojunction films as active layers, which consisted of two p-type semiconductor materials, 2, 2'; 7', 2 ''-terphenanthrenyl (Ph3) and vanadyl-phthalocyanine (VOPc). The ambipolar charge transport was attributed to the interfacial electronic structure of Ph3-VOPc isotype heterojunction, and electrons and holes were accumulated at both sides of the narrow band-gap VOPc and the wide band-gap Ph3, respectively, which were confirmed by the capacitance-voltage relationship of metal-oxide-semiconductor diodes. The accumulation thickness of carriers was also obtained by changing the heterojunction active layer thickness. Furthermore, the results indicate that the device performance is relative to interfacial electronic structures. (c) 2008 American Institute of Physics. |
| 语种 | 英语 |
| WOS记录号 | WOS:000259797900080 |
| 出版者 | AMER INST PHYSICS |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/64525]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Wang, Haibo |
| 作者单位 | Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Haibo,Wang, Xiujin,Yu, Bo,et al. p-p isotype organic heterojunction and ambipolar field-effect transistors[J]. APPLIED PHYSICS LETTERS,2008,93(11). |
| APA | Wang, Haibo,Wang, Xiujin,Yu, Bo,Geng, Yanhou,&Yan, Donghang.(2008).p-p isotype organic heterojunction and ambipolar field-effect transistors.APPLIED PHYSICS LETTERS,93(11). |
| MLA | Wang, Haibo,et al."p-p isotype organic heterojunction and ambipolar field-effect transistors".APPLIED PHYSICS LETTERS 93.11(2008). |
入库方式： OAI收割
来源：化学研究所
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