High gain in hybrid transistors with BAlq(3)/Alq(3) isotype heterostructure emitter
文献类型：期刊论文
| 作者 | Yi, Mingdong1; Huang, Jinying1; Ma, Dongge1; Huemmelgen, Ivo A.2 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2008-06-16 |
| 卷号 | 92期号:24 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2949754 |
| 英文摘要 | We report the fabrication of permeable metal-base transistors based on bis(2-methyl-8-quinolinolato-N1,O8)-(1,1'-biphenyl-4-olato) aluminum (BAlq(3))/tri(8-hydroxyquinoline) aluminum (Alq(3)) isotype heterostructure as emitter layer. In this transistor, n-Si was used as the collector, LiF/Al as the emitter electrode, and Au/Al bilayer metal as the base. We show that the leakage current is greatly reduced in Al/n-Si/Au/Al/BAlq(3)/Alq(3)/LiF/Al devices with respect to Al/n-Si/Au/Al/Alq(3)/LiF/Al devices due to the utilization of BAlq(3)/Alq(3) isotype heterostructure emitter, leading to high common-base and common-emitter current gains at low driving voltages. (c) 2008 American Institute of Physics. |
| 语种 | 英语 |
| WOS记录号 | WOS:000256934900112 |
| 出版者 | AMER INST PHYSICS |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/64837]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Yi, Mingdong |
| 作者单位 | 1.Chinese Acad Sci, Grad Sch, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China 2.Univ Fed Parana, Dept Fis, Grp Organ Optoelect Devices, BR-81531990 Curitiba, Parana, Brazil |
| 推荐引用方式 GB/T 7714 | Yi, Mingdong,Huang, Jinying,Ma, Dongge,et al. High gain in hybrid transistors with BAlq(3)/Alq(3) isotype heterostructure emitter[J]. APPLIED PHYSICS LETTERS,2008,92(24). |
| APA | Yi, Mingdong,Huang, Jinying,Ma, Dongge,&Huemmelgen, Ivo A..(2008).High gain in hybrid transistors with BAlq(3)/Alq(3) isotype heterostructure emitter.APPLIED PHYSICS LETTERS,92(24). |
| MLA | Yi, Mingdong,et al."High gain in hybrid transistors with BAlq(3)/Alq(3) isotype heterostructure emitter".APPLIED PHYSICS LETTERS 92.24(2008). |
入库方式： OAI收割
来源：化学研究所
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