Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage
文献类型：期刊论文
| 作者 | Feng, Chengang2,3; Yi, Mingdong2; Yu, Shunyang2; Hummelgen, Ivo A.1; Zhang, Tong3; Ma, Dongge2 |
| 刊名 | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
 |
| 出版日期 | 2008-04-01 |
| 卷号 | 8期号:4页码:2037-2043 |
| 关键词 | Permeable-base Transistor Organic Semiconductor Hybrid Transistor |
| ISSN号 | 1533-4880 |
| DOI | 10.1166/jnn.2008.054 |
| 英文摘要 | We demonstrate the suitability of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB), an organic semiconductor widely used in organic light-emitting diodes (OLEDs), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. By introducing vanadium oxide (V(2)O(5)) between the injecting metal and NPB layer at the transistor emitter, we reduced the emitter operational voltage. The addition of two Ca layers, leading to a Ca/Ag/Ca base, allowed to obtain a large value of common-emitter current gain, but still retaining the permeable-base transistor character. This kind of vertical devices produced by simple technologies offer attractive new possibilities due to the large variety of available molecular semiconductors, opening the possibility of incorporating new functionalities in silicon-based devices. |
| 语种 | 英语 |
| WOS记录号 | WOS:000255790400055 |
| 出版者 | AMER SCIENTIFIC PUBLISHERS |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/65123]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Hummelgen, Ivo A. |
| 作者单位 | 1.Univ Fed Parana, Grp Organ Optoelect Devices, Dept Fis, BR-81531990 Curitiba, Parana, Brazil 2.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Grad Sch, Changchun 130022, Peoples R China 3.Jilin Univ, Natl Key Lab Integrated Optoelect, Changchun 130012, Peoples R China |
| 推荐引用方式 GB/T 7714 | Feng, Chengang,Yi, Mingdong,Yu, Shunyang,et al. Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2008,8(4):2037-2043. |
| APA | Feng, Chengang,Yi, Mingdong,Yu, Shunyang,Hummelgen, Ivo A.,Zhang, Tong,&Ma, Dongge.(2008).Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,8(4),2037-2043. |
| MLA | Feng, Chengang,et al."Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 8.4(2008):2037-2043. |
入库方式： OAI收割
来源：化学研究所
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