Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors
文献类型:期刊论文
作者 | Yu, Shunyang; Yi, Mingdong; Ma, Dongge |
刊名 | THIN SOLID FILMS
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出版日期 | 2008-03-31 |
卷号 | 516期号:10页码:3346-3349 |
关键词 | Organic Transistor Charge Transport Energetic Disorder |
ISSN号 | 0040-6090 |
DOI | 10.1016/j.tsf.2007.11.014 |
英文摘要 | Copper phthalocyanine organic thin-film transistors (OTFTs) were fabricated with top-gate geometry and the effects of different gate dielectrics on the transport proper-ties in OTFTs were studied. The mobility was found to be gate voltage dependent and the results showed that besides the charge density in the accumulation layer, the energetic disorder induced by gate dielectrics played an important role in determining the field-effect mobility in OTFTs. (c) 2007 Elsevier B.V. All rights reserved. |
语种 | 英语 |
WOS记录号 | WOS:000254634600087 |
出版者 | ELSEVIER SCIENCE SA |
源URL | [http://ir.iccas.ac.cn/handle/121111/65441] ![]() |
专题 | 中国科学院化学研究所 |
通讯作者 | Ma, Dongge |
作者单位 | Chinese Acad Sci, Grad Sch, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China |
推荐引用方式 GB/T 7714 | Yu, Shunyang,Yi, Mingdong,Ma, Dongge. Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors[J]. THIN SOLID FILMS,2008,516(10):3346-3349. |
APA | Yu, Shunyang,Yi, Mingdong,&Ma, Dongge.(2008).Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors.THIN SOLID FILMS,516(10),3346-3349. |
MLA | Yu, Shunyang,et al."Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors".THIN SOLID FILMS 516.10(2008):3346-3349. |
入库方式: OAI收割
来源:化学研究所
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