中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors

文献类型:期刊论文

作者Yu, Shunyang; Yi, Mingdong; Ma, Dongge
刊名THIN SOLID FILMS
出版日期2008-03-31
卷号516期号:10页码:3346-3349
关键词Organic Transistor Charge Transport Energetic Disorder
ISSN号0040-6090
DOI10.1016/j.tsf.2007.11.014
英文摘要Copper phthalocyanine organic thin-film transistors (OTFTs) were fabricated with top-gate geometry and the effects of different gate dielectrics on the transport proper-ties in OTFTs were studied. The mobility was found to be gate voltage dependent and the results showed that besides the charge density in the accumulation layer, the energetic disorder induced by gate dielectrics played an important role in determining the field-effect mobility in OTFTs. (c) 2007 Elsevier B.V. All rights reserved.
语种英语
WOS记录号WOS:000254634600087
出版者ELSEVIER SCIENCE SA
源URL[http://ir.iccas.ac.cn/handle/121111/65441]  
专题中国科学院化学研究所
通讯作者Ma, Dongge
作者单位Chinese Acad Sci, Grad Sch, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
推荐引用方式
GB/T 7714
Yu, Shunyang,Yi, Mingdong,Ma, Dongge. Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors[J]. THIN SOLID FILMS,2008,516(10):3346-3349.
APA Yu, Shunyang,Yi, Mingdong,&Ma, Dongge.(2008).Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors.THIN SOLID FILMS,516(10),3346-3349.
MLA Yu, Shunyang,et al."Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors".THIN SOLID FILMS 516.10(2008):3346-3349.

入库方式: OAI收割

来源:化学研究所

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