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Vertical structure p-type permeable metal-base organic transistors based on N,N '-diphentyl-N,N '-bis(1-naphthylphenyl)-1,1 '-biphenyl-4,4 '-diamine

文献类型:期刊论文

作者Huang, Jinying1; Yi, Mingdong1; Ma, Dongge1; Hummelgen, Ivo A.2
刊名APPLIED PHYSICS LETTERS
出版日期2008-06-09
卷号92期号:23
ISSN号0003-6951
DOI10.1063/1.2944880
英文摘要In this article, vertical structure p-type permeable-base organic transistors were proposed and demonstrated. A hole-type organic semiconductor N,N(')-diphentyl-N,N(')-bis(1-naphthylphenyl)-1,1(')-biphenyl-4,4(')-diamine was used as emitter and collector. In the permeable-base transistors, the metal base was formed by firstly coevaporating Al and Ca in vacuum and then annealing at 120 degrees C for 5 min in air, followed by a thin Al deposition. These devices show a common-base current gain of near 1.0 and a common-emitter current gain of similar to 270. (C) 2008 American Institute of Physics.
语种英语
WOS记录号WOS:000256706000038
出版者AMER INST PHYSICS
源URL[http://ir.iccas.ac.cn/handle/121111/65453]  
专题中国科学院化学研究所
通讯作者Ma, Dongge
作者单位1.Chinese Acad Sci, Grad Sch, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
2.Univ Fed Parana, Dept Fis, Grp Organ Optoelect Devices, BR-81531990 Curitiba, Parana, Brazil
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Huang, Jinying,Yi, Mingdong,Ma, Dongge,et al. Vertical structure p-type permeable metal-base organic transistors based on N,N '-diphentyl-N,N '-bis(1-naphthylphenyl)-1,1 '-biphenyl-4,4 '-diamine[J]. APPLIED PHYSICS LETTERS,2008,92(23).
APA Huang, Jinying,Yi, Mingdong,Ma, Dongge,&Hummelgen, Ivo A..(2008).Vertical structure p-type permeable metal-base organic transistors based on N,N '-diphentyl-N,N '-bis(1-naphthylphenyl)-1,1 '-biphenyl-4,4 '-diamine.APPLIED PHYSICS LETTERS,92(23).
MLA Huang, Jinying,et al."Vertical structure p-type permeable metal-base organic transistors based on N,N '-diphentyl-N,N '-bis(1-naphthylphenyl)-1,1 '-biphenyl-4,4 '-diamine".APPLIED PHYSICS LETTERS 92.23(2008).

入库方式: OAI收割

来源:化学研究所

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