Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter
文献类型：期刊论文
| 作者 | da Silva, Wilson J.1; Huemmelgen, Ivo A.1; Mello, Regina M. Q.2; Ma, Dongge3 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2008-08-04 |
| 卷号 | 93期号:5 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2967731 |
| 英文摘要 | We demonstrate hybrid vertical architecture transistors that operate like metal-base transistors, using n-type silicon as the collector, sulfonated polyaniline as the base, and C(60) fullerene as the emitter. Electrical measurements suggest that the sulfonated polyaniline base effectively screens the emitter from electric field variations occurring in the collector leading to the metal-base transistor behavior. These devices operate at low voltages and show common-emitter current gain equal to 8, which is independent of the base current up to values of similar to 1.5 mu A and constant at collector voltages between 1 and 5 V. |
| 语种 | 英语 |
| WOS记录号 | WOS:000258335900075 |
| 出版者 | AMER INST PHYSICS |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/65485]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Huemmelgen, Ivo A. |
| 作者单位 | 1.Univ Fed Parana, Dept Fis, Grp Organ Optoelect Devices, BR-81531990 Curitiba, PR, Brazil 2.Univ Fed Parana, Dept Quim, BR-81531990 Curitiba, PR, Brazil 3.Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China |
| 推荐引用方式 GB/T 7714 | da Silva, Wilson J.,Huemmelgen, Ivo A.,Mello, Regina M. Q.,et al. Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter[J]. APPLIED PHYSICS LETTERS,2008,93(5). |
| APA | da Silva, Wilson J.,Huemmelgen, Ivo A.,Mello, Regina M. Q.,&Ma, Dongge.(2008).Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter.APPLIED PHYSICS LETTERS,93(5). |
| MLA | da Silva, Wilson J.,et al."Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter".APPLIED PHYSICS LETTERS 93.5(2008). |
入库方式： OAI收割
来源：化学研究所
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