High-performance organic transistor memory elements with steep flanks of hysteresis
文献类型：期刊论文
| 作者 | Wu, Weiping1,2; Zhang, Hongliang1,2; Wang, Ying1,2; Ye, Shanghui1,2; Guo, Yunlong1,2; Di, Chongan1,2; Yu, Gui1; Zhu, Daoben1; Liu, Yunqi1 |
| 刊名 | ADVANCED FUNCTIONAL MATERIALS
 |
| 出版日期 | 2008-09-10 |
| 卷号 | 18期号:17页码:2593-2601 |
| ISSN号 | 1616-301X |
| DOI | 10.1002/adfm.200701269 |
| 英文摘要 | High-performance organic transistor memory elements with donor-polymer blends as buffer layers are presented. These organic memory transistors have steep flanks of hysteresis with an ON/OFF memory ratio of up to 2 x 10(4), and a retention time in excess of 24 h. Inexpensive materials such as poly(methyl methacrylate), ferrocene and copper phthalocyanine are used for the device fabrication, providing a convenient approach of producing organic memory transistors at low cost and high efficiency. |
| 语种 | 英语 |
| WOS记录号 | WOS:000259521600017 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/65575]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Wu, Weiping |
| 作者单位 | 1.Chinese Acad Sci, Key Lab Organ Solids, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100080, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wu, Weiping,Zhang, Hongliang,Wang, Ying,et al. High-performance organic transistor memory elements with steep flanks of hysteresis[J]. ADVANCED FUNCTIONAL MATERIALS,2008,18(17):2593-2601. |
| APA | Wu, Weiping.,Zhang, Hongliang.,Wang, Ying.,Ye, Shanghui.,Guo, Yunlong.,...&Liu, Yunqi.(2008).High-performance organic transistor memory elements with steep flanks of hysteresis.ADVANCED FUNCTIONAL MATERIALS,18(17),2593-2601. |
| MLA | Wu, Weiping,et al."High-performance organic transistor memory elements with steep flanks of hysteresis".ADVANCED FUNCTIONAL MATERIALS 18.17(2008):2593-2601. |
入库方式： OAI收割
来源：化学研究所
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